2SD1857ATV2Q Rohm Semiconductor, 2SD1857ATV2Q Datasheet
2SD1857ATV2Q
Manufacturer Part Number
2SD1857ATV2Q
Description
TRANS DVR NPN 160V 1.5A ATV TB
Manufacturer
Rohm Semiconductor
Datasheet
1.2SD1857ATV2Q.pdf
(2 pages)
Specifications of 2SD1857ATV2Q
Transistor Type
NPN
Current - Collector (ic) (max)
1.5A
Voltage - Collector Emitter Breakdown (max)
160V
Vce Saturation (max) @ Ib, Ic
2V @ 100mA, 1A
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 100mA, 5V
Power - Max
1W
Frequency - Transition
80MHz
Mounting Type
Through Hole
Package / Case
ATV
Ecb Npn
Transistor Polarity
Collector Emitter Voltage V(br)ceo
160V
Power Dissipation Pd
1W
Dc Collector Current
1A
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
ATV
No. Of Pins
3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
160 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
1.5 A
Maximum Dc Collector Current
3 A
Power Dissipation
1 W
Maximum Operating Frequency
80 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
82
Gain Bandwidth Product Ft
80 MHz
Dc Current Gain Hfe
82
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SD1857ATV2Q
Manufacturer:
COOLER
Quantity:
101
Transistors
Power Transistor (160V , 1.5A)
2SD2211 / 2SD1918 / 2SD1857A
!Features
1) High breakdown voltage.(BV
2) Low collector output capacitance.
3) High transition frequency.(f
4) Complements the 2SB1275 / 2SB1236A.
!Absolute maximum ratings (Ta = 25°C)
∗
∗
∗
!Packaging specifications and h
!Electrical characteristics (Ta = 25°C)
∗
*
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current
transfer ratio
Transition frequency
Output capacitance
3
Measured using pulse current.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
1 Single pulse Pw=100ms
2
Collector
power
dissipation
Junction temperature
Storage temperature
Denotes h
Printed circuit board 1.7mm thick, collector plating 1cm
When mounted on a 40 x 40 x 0.7mm ceramic board.
Basic ordering unit (pieces)
(Typ. 20pF at V
FE
Package
Marking
Parameter
Type
Code
2SD1857A
2SD2211
2SD1918
h
Parameter
FE
2SD2211,2SD1918
2SD1857A
CB
= 10V)
2SD2211
MPT3
T100
1000
QR
DQ*
Symbol
Tstg
V
V
V
P
Tj
CBO
CEO
I
EBO
Symbol
C
C
BV
BV
BV
V
V
T
I
Cob
I
CE(sat)
BE(sat)
h
2SD1918
CBO
EBO
f
FE
CBO
CEO
EBO
T
= 80MH
CPT3
2500
CEO
TL
Q
−
FE
2
= 160V)
−55 ∼+150
or larger
2SD1857A
Min.
Limits
160
160
120
82
160
160
150
5
−
−
−
−
−
−
1.5
10
5
3
1
2
1
2500
Z
ATV
TV2
PQ
)
−
.
Typ.
80
20
−
−
−
−
−
−
−
−
−
W(Tc=25°C)
A(Pulse)
Max.
390
270
A(DC)
1.5
−
−
−
1
1
2
−
−
Unit
°C
°C
W
W
V
V
V
MHz
Unit
µA
µA
pF
V
V
V
V
V
−
−
∗1
∗2
∗3
I
I
I
V
V
I
I
V
V
V
C
C
E
C
C
CB
EB
/I
/I
CE
CE
CB
= 50µA
= 1mA
= 50µA
!External dimensions (Units : mm)
2SD2211 / 2SD1918 / 2SD1857A
B
B
/I
= 120V
= 4V
= 5V , I
= 10V , I
= 1A/0.1A
= 1A/0.1A
C
2SD2211
2SD1918
2SD1857A
= 5V/0.1A
ROHM : MPT3
EIAJ : SC-62
ROHM : CPT3
EIAJ : SC-63
ROHM : ATV
E
E
= − 0.1A , f = 30MHz
= 0A , f = 1MHz
Conditions
0.65Max.
( 1 )
0.8Min.
( 2 )
2.54
6.8
1.0
2.54
( 3 )
2.5
( 1 )
( 2 )
( 3 )
0.5
1.5
0.9
9.5
5.5
4.0
2.5
∗
∗
Taping specifications
1.05
1.5
0.5
C0.5
2.5
0.45
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
(1) Emitter
(2) Collector
(3) Base
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2SD1857ATV2Q Summary of contents
Page 1
Transistors Power Transistor (160V , 1.5A) 2SD2211 / 2SD1918 / 2SD1857A !Features = 160V) 1) High breakdown voltage.(BV CEO 2) Low collector output capacitance. = 10V) (Typ. 20pF 80MH 3) High transition frequency.( Complements ...
Page 2
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