MJD47T4 STMicroelectronics, MJD47T4 Datasheet

TRANSISTOR NPN 250V 1A DPAK

MJD47T4

Manufacturer Part Number
MJD47T4
Description
TRANSISTOR NPN 250V 1A DPAK
Manufacturer
STMicroelectronics
Type
High Voltage, Powerr
Datasheets

Specifications of MJD47T4

Transistor Type
NPN
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
250V
Vce Saturation (max) @ Ib, Ic
1V @ 200mA, 1A
Current - Collector Cutoff (max)
100µA
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 300mA, 10V
Power - Max
15W
Frequency - Transition
10MHz
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Current, Collector
1 A
Current, Gain
10
Frequency
10 MHz
Package Type
TO-252
Polarity
NPN
Power Dissipation
15 W
Primary Type
Si
Resistance, Thermal, Junction To Case
8.33 °C/W
Voltage, Breakdown, Collector To Emitter
250 V
Voltage, Collector To Base
350 V
Voltage, Collector To Emitter
250 V
Voltage, Collector To Emitter, Saturation
1 V
Voltage, Emitter To Base
5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2482-2

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Quantity
Price
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APPLICATIONS
DESCRIPTION
The MJD47 is manufactured using Medium
Voltage Epitaxial Planar technology, resulting in a
rugged high performance cost-effective transistor.
ABSOLUTE MAXIMUM RATINGS
January 2000
Symbol
STMicroelectronics PREFERRED
SALESTYPE
HIGH VOLTAGE CAPABILITY
SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
ELECTRICALLY SIMILAR TO TIP47
SWITCH MODE POWER SUPPLIES
AUDIO AMPLIFIERS
GENERAL PURPOSE SWITCHING AND
AMPLIFIER
V
V
V
T
P
I
I
CBO
CEO
EBO
I
CM
T
I
BM
stg
C
B
tot
j
Collector-Base Voltage (I
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current (t
Base Current
Base Peak Current (t
Total Dissipation at T
Storage Temperature
Max. Operating Junction Temperature
®
Parameter
p
c
< 5 ms)
= 25
C
p
E
= 0)
< 5 ms)
= 0)
B
o
C
= 0)
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
INTERNAL SCHEMATIC DIAGRAM
-65 to 150
(Suffix "T4")
Value
TO-252
350
250
150
0.6
1.2
DPAK
15
5
1
2
1
3
MJD47
Unit
o
o
W
V
V
V
A
A
A
A
C
C
1/6

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MJD47T4 Summary of contents

Page 1

... STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICALLY SIMILAR TO TIP47 APPLICATIONS SWITCH MODE POWER SUPPLIES AUDIO AMPLIFIERS GENERAL PURPOSE SWITCHING AND AMPLIFIER DESCRIPTION The MJD47 is manufactured using Medium Voltage Epitaxial Planar technology, resulting in a rugged high performance cost-effective transistor ...

Page 2

MJD47 THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CES Current ( Collector Cut-off CEO Current ( Emitter Cut-off Current ...

Page 3

DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Collector-Emitter Saturation Voltage Collector-Base Capacitance MJD47 3/6 ...

Page 4

MJD47 Switching Time Inductive Load Switching Time Inductive Load 4/6 Switching Time Inductive Load Switching Time Inductive Load ...

Page 5

TO-252 (DPAK) MECHANICAL DATA DIM. MIN. TYP. A 2.20 A1 0.90 A2 0.03 B 0.64 B2 5.20 C 0.45 C2 0.48 D 6.00 E 6.40 G 4. MAX. MIN. 2.40 0.087 ...

Page 6

... This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © 2000 STMicroelectronics – Printed in Italy – All Rights Reserved Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U ...

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