MPS6652G ON Semiconductor, MPS6652G Datasheet

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MPS6652G

Manufacturer Part Number
MPS6652G
Description
TRANS PNP GP SS 40V TO92
Manufacturer
ON Semiconductor
Type
Amplifierr
Datasheets

Specifications of MPS6652G

Transistor Type
PNP
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
600mV @ 100mA, 1A
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 500mA, 1V
Power - Max
625mW
Frequency - Transition
100MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Current, Collector
-1000 mA
Current, Gain
30
Frequency
100 MHz
Package Type
TO-92
Polarity
PNP
Power Dissipation
1.5 W
Primary Type
Si
Resistance, Thermal, Junction To Case
83.3 °C/W
Voltage, Breakdown, Collector To Emitter
-40 V
Voltage, Collector To Base
-30 V
Voltage, Collector To Emitter
-40 V
Voltage, Collector To Emitter, Saturation
-0.6 V
Voltage, Emitter To Base
-4 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MPS6652GOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MPS6652G
Quantity:
20 000
Part Number:
MPS6652G
Manufacturer:
ON Semiconductor
Quantity:
95
NPN − MPS6601; PNP −
MPS6651, MPS6652
Amplifier Transistors
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. R
*For additional information on our Pb−Free strategy and soldering details, please
© Semiconductor Components Industries, LLC, 2007
April, 2007 − Rev. 5
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation @ T
Derate above 25°C
Total Device Dissipation @ T
Derate above 25°C
Operating and Storage Junction
Temperature Range
Thermal Resistance, Junction−to−Ambient
(Note 1)
Thermal Resistance, Junction−to−Case
Voltage and Current are Negative for PNP Transistors
Pb−Free Packages are Available*
qJA
is measured with the device soldered into a typical printed circuit board.
Characteristic
Rating
MPS6652 is a Preferred Device
MPS6601/6651
MPS6601/6651
A
C
= 25°C
= 25°C
MPS6652
MPS6652
Symbol
Symbol
T
V
V
V
R
R
J
P
P
CEO
CBO
EBO
, T
I
qJA
qJC
C
D
D
stg
−55 to +150
Value
1000
Max
83.3
625
200
4.0
5.0
1.5
25
40
25
30
12
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
°C
W
W
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
BASE
Preferred devices are recommended choices for future use
and best overall value.
2
CASE 29
STYLE 1
TO−92
(Note: Microdot may be in either location)
COLLECTOR
MPS66xy = Device Code
A
Y
WW
G
ORDERING INFORMATION
EMITTER
STRAIGHT LEAD
MARKING DIAGRAM
3
1
http://onsemi.com
BULK PACK
1 2
NPN
3
x = 0 or 5
y = 1 or 2
= Assembly Location
= Year
= Work Week
= Pb−Free Package
AYWW G
MPS
66xy
G
Publication Order Number:
BASE
2
TAPE & REEL
AMMO PACK
BENT LEAD
1
2
COLLECTOR
MPS6601/D
3
EMITTER
3
1
PNP

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MPS6652G Summary of contents

Page 1

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 April, 2007 − Rev. 5 ...

Page 2

... Rise Time Storage Time Fall Time ORDERING INFORMATION Device MPS6601RLRAG MPS6651G MPS6652 MPS6652G MPS6652RLRAG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/ 25°C unless otherwise noted) A MPS6601/6651 ...

Page 3

NPN − MPS6601; PNP − MPS6651, MPS6652 1.0 0 0.5 0.5 0.3 0.2 0.2 0.1 0.05 0.1 0.02 0.07 SINGLE PULSE 0.05 0.01 SINGLE PULSE 0.03 0.02 0.01 0.001 0.002 0.005 0.01 0.02 TURN−ON TIME −1.0 V 5.0 ...

Page 4

NPN − MPS6601; PNP − MPS6651, MPS6652 NPN 300 200 100 1 25° 100 I , COLLECTOR CURRENT (mA) C Figure 3. MPS6601/6602 DC Current Gain 300 200 100 ...

Page 5

NPN − MPS6601; PNP − MPS6651, MPS6652 NPN 5 1.0 2.0 3 REVERSE VOLTAGE (VOLTS) R Figure 9. Capacitance 10 8.0 6.0 = 100 ...

Page 6

NPN − MPS6601; PNP − MPS6651, MPS6652 NPN −0.8 −1.2 −1.6 R for V qVB BE −2.0 −2.4 −2.8 1.0 10 100 I , COLLECTOR CURRENT (mA) C Figure 15. Base−Emitter Temperature Coefficient 1 k 500 T = 25°C 200 ...

Page 7

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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