MPS6652G ON Semiconductor, MPS6652G Datasheet - Page 6
![no-image](/images/manufacturer_photos/0/4/495/on_semiconductor_sml.jpg)
MPS6652G
Manufacturer Part Number
MPS6652G
Description
TRANS PNP GP SS 40V TO92
Manufacturer
ON Semiconductor
Type
Amplifierr
Specifications of MPS6652G
Transistor Type
PNP
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
600mV @ 100mA, 1A
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 500mA, 1V
Power - Max
625mW
Frequency - Transition
100MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Current, Collector
-1000 mA
Current, Gain
30
Frequency
100 MHz
Package Type
TO-92
Polarity
PNP
Power Dissipation
1.5 W
Primary Type
Si
Resistance, Thermal, Junction To Case
83.3 °C/W
Voltage, Breakdown, Collector To Emitter
-40 V
Voltage, Collector To Base
-30 V
Voltage, Collector To Emitter
-40 V
Voltage, Collector To Emitter, Saturation
-0.6 V
Voltage, Emitter To Base
-4 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MPS6652GOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MPS6652G
Manufacturer:
ON Semiconductor
Quantity:
95
−0.8
−1.2
−1.6
−2.0
−2.4
−2.8
500
200
100
1.0
0.8
0.6
0.4
0.2
1 k
50
20
10
0
1.0
1.0
0.01
T
Figure 19. MPS6601/6602 Saturation Region
C
10 mA
= 25°C
I
C
Figure 15. Base−Emitter Temperature
2.0
=
Figure 17. Safe Operating Area
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
V
0.1
CE
10
R
I
, COLLECTOR−EMITTER VOLTAGE
C
qVB
, COLLECTOR CURRENT (mA)
50 mA
I
I
C
5.0
B
, BASE CURRENT (mA)
for V
=
Coefficient
BE
NPN − MPS6601; PNP − MPS6651, MPS6652
NPN
100 mA
100
MPS6601
MPS6602
1.0
10
I
C
=
1.0 s
20
1.0 MS
1000
500 mA
10
I
C
40
=
T
250 mA
1000 mA
http://onsemi.com
J
I
= 25°C
I
C
C
=
=
100
6
−500
−200
−100
−0.8
−1.2
−1.6
−2.0
−2.4
−2.8
−1.0
−0.8
−0.6
−0.4
−0.2
−1 k
−50
−20
−10
0
−0.01
−1.0
−1.0
Figure 20. MPS6651/6652 Saturation Region
T
C
= 25°C
−10 mA
Figure 16. Base−Emitter Temperature
−2.0
I
R
C
qVB
=
Figure 18. Safe Operating Area
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
V
for V
−0.1
−10
CE
I
−50 mA
, COLLECTOR−EMITTER VOLTAGE
C
BE
, COLLECTOR CURRENT (mA)
I
C
−5.0
I
B
=
, BASE CURRENT (mA)
Coefficient
PNP
−100
−1.0
−10
MPS6651
MPS6652
−100 mA
I
C
1.0 s
=
−20
1.0 MS
−1000
−10
−500 mA
−40
I
C
=
T
−250 mA
−1000 mA
J
I
= 25°C
C
I
C
=
=
−100