MPS6652G ON Semiconductor, MPS6652G Datasheet - Page 6

• Manufacturer Part Number: MPS6652G
• Description: TRANS PNP GP SS 40V TO92
• Manufacturer: ON Semiconductor
• Type: Amplifierr

Specifications of MPS6652G

• Transistor Type: PNP
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 100mA, 1A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 500mA, 1V
• Power - Max: 625mW
• Frequency - Transition: 100MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Current, Collector: -1000 mA
• Current, Gain: 30
• Frequency: 100 MHz
• Package Type: TO-92
• Polarity: PNP
• Power Dissipation: 1.5 W
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 83.3 °C/W
• Voltage, Breakdown, Collector To Emitter: -40 V
• Voltage, Collector To Base: -30 V
• Voltage, Collector To Emitter: -40 V
• Voltage, Collector To Emitter, Saturation: -0.6 V
• Voltage, Emitter To Base: -4 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MPS6652GOS

−0.8
−1.2
−1.6
−2.0
−2.4
−2.8
500
200
100
1.0
0.8
0.6
0.4
0.2
1 k
50
20
10
0
1.0
1.0
0.01
T
Figure 19. MPS6601/6602 Saturation Region
C
10 mA
= 25°C
I
C
Figure 15. Base−Emitter Temperature
2.0
=
Figure 17. Safe Operating Area
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
V
0.1
CE
10
R
I
, COLLECTOR−EMITTER VOLTAGE
C
qVB
, COLLECTOR CURRENT (mA)
50 mA
I
I
C
5.0
B
, BASE CURRENT (mA)
for V
=
Coefficient
BE
NPN − MPS6601; PNP − MPS6651, MPS6652
NPN
100 mA
100
MPS6601
MPS6602
1.0
10
I
C
=
1.0 s
20
1.0 MS
1000
500 mA
10
I
C
40
=
T
250 mA
1000 mA
http://onsemi.com
J
I
= 25°C
I
C
C
=
=
100
6
−500
−200
−100
−0.8
−1.2
−1.6
−2.0
−2.4
−2.8
−1.0
−0.8
−0.6
−0.4
−0.2
−1 k
−50
−20
−10
0
−0.01
−1.0
−1.0
Figure 20. MPS6651/6652 Saturation Region
T
C
= 25°C
−10 mA
Figure 16. Base−Emitter Temperature
−2.0
I
R
C
qVB
=
Figure 18. Safe Operating Area
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
V
for V
−0.1
−10
CE
I
−50 mA
, COLLECTOR−EMITTER VOLTAGE
C
BE
, COLLECTOR CURRENT (mA)
I
C
−5.0
I
B
=
, BASE CURRENT (mA)
Coefficient
PNP
−100
−1.0
−10
MPS6651
MPS6652
−100 mA
I
C
1.0 s
=
−20
1.0 MS
−1000
−10
−500 mA
−40
I
C
=
T
−250 mA
−1000 mA
J
I
= 25°C
C
I
C
=
=
−100