MPS6652G ON Semiconductor, MPS6652G Datasheet - Page 5

• Manufacturer Part Number: MPS6652G
• Description: TRANS PNP GP SS 40V TO92
• Manufacturer: ON Semiconductor
• Type: Amplifierr

Specifications of MPS6652G

• Transistor Type: PNP
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 100mA, 1A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 500mA, 1V
• Power - Max: 625mW
• Frequency - Transition: 100MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Current, Collector: -1000 mA
• Current, Gain: 30
• Frequency: 100 MHz
• Package Type: TO-92
• Polarity: PNP
• Power Dissipation: 1.5 W
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 83.3 °C/W
• Voltage, Breakdown, Collector To Emitter: -40 V
• Voltage, Collector To Base: -30 V
• Voltage, Collector To Emitter: -40 V
• Voltage, Collector To Emitter, Saturation: -0.6 V
• Voltage, Emitter To Base: -4 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MPS6652GOS

10 k
500
200
100
8.0
6.0
4.0
2.0
5 k
3 k
1 k
80
60
40
20
10
50
20
10
0
0
C
C
10
10
ob
ib
Figure 13. MPS6601/6602 Switching Times
Figure 11. MPS6601/6602 Noise Figure
20
5.0
1.0
R
V
s
I
C
R
Figure 9. Capacitance
, SOURCE RESISTANCE (OHMS)
, COLLECTOR CURRENT (mA)
, REVERSE VOLTAGE (VOLTS)
100
50
2.0
10
NPN − MPS6601; PNP − MPS6651, MPS6652
NPN
I
100
C
= 100 mA
3.0
15
200
t
V
I
I
T
1 k
d
C
B1
CC
J
/I
@ V
= 25°C
B
= I
= 40 V
= 10
B2
BE(off)
V
f = 1.0 kHz
T
A
CE
t
4.0
t
20
= 25°C
t
r
s
f
T
= 5.0 V
J
C
C
= 0.5 V
500
= 25°C
http://onsemi.com
ib
ob
t
d
1000
10 k
5.0
25
5
10 k
160
120
500
200
100
8.0
6.0
4.0
2.0
5 k
3 k
1 k
80
40
10
50
20
10
0
0
−10
10
C
C
ob
ib
Figure 14. MPS6651/6652 Switching Times
Figure 12. MPS6651/6652 Noise Figure
−20
−5.0
−1.0
100
R
V
Figure 10. Capacitance
s
I
C
R
, SOURCE RESISTANCE (OHMS)
, COLLECTOR CURRENT (mA)
, REVERSE VOLTAGE (VOLTS)
−50
I
−2.0
−10
C
= 100 mA
PNP
−100
1 k
−3.0
−15
−200
t
V
I
I
T
d
C
B1
CC
J
/I
@ V
= 25°C
B
= I
= −40 V
= 10
10 k
B2
BE(off)
t
t
V
f = 1.0 kHz
T
s
f
A
CE
−4.0
−20
= 25°C
T
= −5.0 V
J
= −0.5 V
−500
C
C
= 25°C
ib
ob
t
t
d
r
−1000
−5.0
−25