MJE253G ON Semiconductor, MJE253G Datasheet

MJE253G

Manufacturer Part Number

MJE253G

Description

TRANS PWR PNP 4A 100V TO225AA

Manufacturer

ON Semiconductor

Type

Powerr

Datasheets

1.MJE243G.pdf (6 pages)

2.MJE243G.pdf (3 pages)

Specifications of MJE253G

Transistor Type

PNP

Current - Collector (ic) (max)

Voltage - Collector Emitter Breakdown (max)

100V

Vce Saturation (max) @ Ib, Ic

600mV @ 100mA, 1A

Dc Current Gain (hfe) (min) @ Ic, Vce

40 @ 200mA, 1V

Power - Max

1.5W

Frequency - Transition

40MHz

Mounting Type

Through Hole

Package / Case

TO-225-3

Transistor Polarity

PNP

Mounting Style

Through Hole

Collector- Emitter Voltage Vceo Max

100 V

Emitter- Base Voltage Vebo

7 V

Maximum Dc Collector Current

4 A

Power Dissipation

15 W

Maximum Operating Temperature

+ 150 C

Continuous Collector Current

4 A

Dc Collector/base Gain Hfe Min

Maximum Operating Frequency

40 MHz

Minimum Operating Temperature

- 65 C

Current, Collector

4 A

Current, Gain

Frequency

40 MHz

Package Type

TO-225

Polarity

PNP

Primary Type

Resistance, Thermal, Junction To Case

8.34 °C/W

Voltage, Breakdown, Collector To Emitter

100 V

Voltage, Collector To Base

100 V

Voltage, Collector To Emitter

100 V

Voltage, Collector To Emitter, Saturation

0.6 V

Voltage, Emitter To Base

7 V

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

MJE253GOS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MJE253G

Quantity:

12 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MJE253G

Manufacturer:

ON Semiconductor

Quantity:

345

Company:

BOSTOCK HK LIMITED

Part Number:

MJE253G

Manufacturer:

Company:

Euro Chip Distribution

Part Number:

MJE253G

Quantity:

2 921

Company:

H&T Electronics

Part Number:

MJE253G

Quantity:

15 000

Company:

H&T Electronics

Part Number:

MJE253G

Quantity:

90 000

Current page: 1 of 6
Download datasheet (188Kb)

MJE243 - NPN,

MJE253 - PNP

Complementary Silicon

Power Plastic Transistors

low−current, high−speed switching applications.

Features

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

*For additional information on our Pb−Free strategy and soldering details, please

April, 2009 − Rev. 13

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Collector Current

Base Current

Total Power Dissipation @ T

Operating and Storage Junction

Temperature Range

Thermal Resistance, Junction−to−Case

Thermal Resistance,

These devices are designed for low power audio amplifier and

High Collector−Emitter Sustaining Voltage −

High DC Current Gain @ I

Low Collector−Emitter Saturation Voltage −

High Current Gain Bandwidth Product −

Annular Construction for Low Leakages

Pb−Free Packages are Available*

Derate above 25_C

Junction−to−Ambient

Characteristic

CBO

CEO(sus)

CE(sat)

= 40 MHz (Min) @ I

Rating

= 40 −200

= 40 −120

= 100 nAdc (Max) @ Rated V

− Continuous

− Peak

= 0.3 Vdc (Max) @ I

= 100 Vdc (Min)

= 25_C

= 200 mAdc

= 100 mAdc

Symbol

, T

CEO

= 500 mAdc

stg

–65 to +150

Value

Max

8.34

83.4

100

120

7.0

4.0

8.0

1.5

mW/_C

_C/W

Unit

Vdc

Adc

Preferred devices are recommended choices for future use

and best overall value.

MJE243

MJE243G

MJE253

MJE253G

COMPLEMENTARY SILICON

Device

POWER TRANSISTORS

100 VOLTS, 15 WATTS

ORDERING INFORMATION

2 1

JE2x3 = Device Code

MARKING DIAGRAM

4.0 AMPERES

http://onsemi.com

(Pb−Free)

= Year

= Work Week

= Pb−Free Package

Package

TO−225

x = 4 or 5

JE2x3G

Publication Order Number:

YWW

CASE 77

STYLE 1

TO−225

500 Units/Box

Shipping

MJE243/D

Related parts for MJE253G

MJE253G Summary of contents

Page 1

... Pb−Free Package ORDERING INFORMATION Device Package Shipping MJE243 TO−225 500 Units/Box TO−225 500 Units/Box MJE243G (Pb−Free) MJE253 TO−225 500 Units/Box TO−225 500 Units/Box MJE253G (Pb−Free) Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MJE243/D ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage ( mAdc Collector Cutoff Current (V = 100 Vdc 100 Vdc 125_C) CE ...

Page 3

9.0 V ≤ DUTY CYCLE = 1.0% R and R VARIED TO OBTAIN DESIRED CURRENT ...

Page 4

T = 150°C J 0.5 BONDING WIRE LIMITED THERMALLY LIMITED @ 0 25°C (SINGLE PULSE) C 0.1 SECOND BREAKDOWN LIMITED CURVES APPLY BELOW 0.05 RATED V CEO 0.02 MJE243/MJE253 0.01 1.0 ...

Page 5

NPN MJE243 500 T = 150°C J 300 200 25°C 100 - 55° 7.0 5.0 0.04 0.06 0.1 0.2 0.4 0 COLLECTOR CURRENT (AMP 25°C J 1.2 1.0 V ...

Page 6

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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