MJE253G ON Semiconductor, MJE253G Datasheet - Page 2

• Manufacturer Part Number: MJE253G
• Description: TRANS PWR PNP 4A 100V TO225AA
• Manufacturer: ON Semiconductor
• Type: Powerr

Specifications of MJE253G

• Transistor Type: PNP
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 100mA, 1A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 200mA, 1V
• Power - Max: 1.5W
• Frequency - Transition: 40MHz
• Mounting Type: Through Hole
• Package / Case: TO-225-3
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 7 V
• Maximum Dc Collector Current: 4 A
• Power Dissipation: 15 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 4 A
• Dc Collector/base Gain Hfe Min: 40
• Maximum Operating Frequency: 40 MHz
• Minimum Operating Temperature: - 65 C
• Current, Collector: 4 A
• Current, Gain: 15
• Frequency: 40 MHz
• Package Type: TO-225
• Polarity: PNP
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 8.34 °C/W
• Voltage, Breakdown, Collector To Emitter: 100 V
• Voltage, Collector To Base: 100 V
• Voltage, Collector To Emitter: 100 V
• Voltage, Collector To Emitter, Saturation: 0.6 V
• Voltage, Emitter To Base: 7 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MJE253GOS

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Collector−Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current (V
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Base−Emitter On Voltage
Current−Gain − Bandwidth Product
Output Capacitance
(I
(V
(V
(I
(I
(I
(I
(I
(I
(I
(V
C
C
C
C
C
C
C
C
CB
CE
CB
= 10 mAdc, I
= 200 mAdc, V
= 1.0 Adc, V
= 500 mAdc, I
= 1.0 Adc, I
= 2.0 Adc, I
= 500 mAdc, V
= 100 mAdc, V
= 100 Vdc, I
= 100 Vdc, I
= 10 Vdc, I
B
B
CE
B
E
= 100 mAdc)
= 200 mAdc)
B
E
E
= 0)
CE
CE
CE
= 0, f = 0.1 MHz)
= 1.0 Vdc)
= 50 mAdc)
= 0)
= 0, T
= 1.0 Vdc)
= 1.0 Vdc)
= 10 Vdc, f
BE
C
= 7.0 Vdc, I
= 125_C)
Characteristic
test
= 10 MHz)
C
(T
= 0)
C
= 25_C unless otherwise noted)
http://onsemi.com
2
V
Symbol
V
V
V
CEO(sus)
I
I
CE(sat)
BE(sat)
BE(on)
h
C
CBO
EBO
f
FE
T
ob
Min
100
40
15
40
−
−
−
−
−
−
−
−
Max
180
0.1
0.1
0.1
0.3
0.6
1.8
1.5
50
−
−
−
mAdc
MHz
Unit
mA
mA
pF
V
V
V
V
−