MJE253G ON Semiconductor, MJE253G Datasheet - Page 4

• Manufacturer Part Number: MJE253G
• Description: TRANS PWR PNP 4A 100V TO225AA
• Manufacturer: ON Semiconductor
• Type: Powerr

Specifications of MJE253G

• Transistor Type: PNP
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 100mA, 1A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 200mA, 1V
• Power - Max: 1.5W
• Frequency - Transition: 40MHz
• Mounting Type: Through Hole
• Package / Case: TO-225-3
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 7 V
• Maximum Dc Collector Current: 4 A
• Power Dissipation: 15 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 4 A
• Dc Collector/base Gain Hfe Min: 40
• Maximum Operating Frequency: 40 MHz
• Minimum Operating Temperature: - 65 C
• Current, Collector: 4 A
• Current, Gain: 15
• Frequency: 40 MHz
• Package Type: TO-225
• Polarity: PNP
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 8.34 °C/W
• Voltage, Breakdown, Collector To Emitter: 100 V
• Voltage, Collector To Base: 100 V
• Voltage, Collector To Emitter: 100 V
• Voltage, Collector To Emitter, Saturation: 0.6 V
• Voltage, Emitter To Base: 7 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MJE253GOS

0.05
0.02
0.01
5.0
2.0
1.0
0.5
0.2
0.1
10
10K
500
300
200
100
5K
3K
2K
1K
50
30
20
10
1.0
0.01
Figure 5. Active Region Safe Operating Area
0.02
V
2.0
CE
0.03 0.05
T
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0 ms
BONDING WIRE LIMITED
THERMALLY LIMITED @
T
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
J
C
3.0
= 150°C
RATED V
= 25°C (SINGLE PULSE)
I
C
Figure 6. Turn−Off Time
, COLLECTOR CURRENT (AMPS)
5.0
0.1
CEO
7.0
t
0.2
f
dc
10
0.3
0.5
MJE243/MJE253
20
NPN MJE243
PNP MJE253
t
s
100 ms
1
30
5.0 ms
2
V
I
I
T
C
B1
500 ms
J
50
CC
/I
= 25°C
B
= I
3
= 30 V
= 10
70
B2
http://onsemi.com
5
100
10
4
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
v 150_C. T
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
200
100
70
50
30
20
10
There are two limitations on the power handling ability of
The data of Figure 5 is based on T
1.0
2.0
J(pk)
MJE243 (NPN)
MJE253 (PNP)
3.0
V
R
Figure 7. Capacitance
may be calculated from the data in
, REVERSE VOLTAGE (VOLTS)
5.0
7.0
C
C
ib
ob
10
20
J(pk)
T
30
J
= 150_C; T
= 25°C
50
C
70
− V
J(pk)
100
C
CE
is