MJD127T4 ON Semiconductor, MJD127T4 Datasheet

MJD127T4

Manufacturer Part Number

MJD127T4

Description

TRANS DARL PNP 8A 100V DPAK

Manufacturer

ON Semiconductor

Datasheet

1.MJD122T4G.pdf (7 pages)

Specifications of MJD127T4

Transistor Type

PNP - Darlington

Current - Collector (ic) (max)

Voltage - Collector Emitter Breakdown (max)

100V

Vce Saturation (max) @ Ib, Ic

4V @ 80mA, 8A

Current - Collector Cutoff (max)

10µA

Dc Current Gain (hfe) (min) @ Ic, Vce

1000 @ 4A, 4V

Power - Max

1.75W

Frequency - Transition

4MHz

Mounting Type

Surface Mount

Package / Case

DPak, TO-252 (2 leads+tab), SC-63

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

MJD127T4OSCT

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MJD127T4

Manufacturer:

ROHM

Quantity:

3 980

Company:

BOSTOCK HK LIMITED

Part Number:

MJD127T4

Manufacturer:

Company:

Meier Automation Equipment Co., Limited

Part Number:

MJD127T4

Manufacturer:

Quantity:

20 000

Company:

H&T Electronics

Part Number:

MJD127T4

Quantity:

12 500

Company:

BOSTOCK HK LIMITED

Part Number:

MJD127T4-ST

Manufacturer:

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MJD127T4G

Manufacturer:

ON Semiconductor

Quantity:

135

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MJD127T4G

Manufacturer:

Quantity:

12 500

Company:

BOSTOCK HK LIMITED

Part Number:

MJD127T4G

Manufacturer:

Company:

Meier Automation Equipment Co., Limited

Part Number:

MJD127T4G

Manufacturer:

ON/安森美

Quantity:

20 000

Company:

H&T Electronics

Part Number:

MJD127T4G

Quantity:

50 000

Company:

H&T Electronics

Part Number:

MJD127T4G

Quantity:

2 500

Company:

H&T Electronics

Part Number:

MJD127T4G

Quantity:

60 000

Current page: 1 of 7
Download datasheet (131Kb)

MJD122 (NPN)

MJD127 (PNP)

Complementary Darlington

Power Transistor

DPAK For Surface Mount Applications

applications.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. These ratings are applicable when surface mounted on the minimum pad

March, 2011 − Rev. 10

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Collector Current

Base Current

Total Power Dissipation @ T

Total Power Dissipation (Note 1)

Operating and Storage Junction

Thermal Resistance

Designed for general purpose amplifier and low speed switching

Lead Formed for Surface Mount Applications in Plastic Sleeves

Surface Mount Replacements for 2N6040−2N6045 Series,

TIP120−TIP122 Series, and TIP125−TIP127 Series

Monolithic Construction With Built−in Base−Emitter Shunt Resistors

High DC Current Gain: h

Epoxy Meets UL 94 V−0 @ 0.125 in

ESD Ratings: Human Body Model, 3B u 8000 V

Pb−Free Packages are Available

sizes recommended.

Derate above 25°C

@ T

Derate above 25°C

Temperature Range

Junction−to−Case

Junction−to−Ambient (Note1)

= 25°C

Characteristic

Rating

Machine Model, C u 400 V

− Continuous

− Peak

= 25°C

= 2500 (Typ) @ I

Symbol

CEO

, T

qJC

qJA

stg

−65 to +150

= 4.0 Adc

Value

0.014

0.16

1.75

Max

6.25

71.4

100

120

mAdc

W/°C

°C/W

Unit

Vdc

Adc

°C

†For information on tape and reel specifications,

MJD122

MJD122G

MJD122T4

MJD122T4G

MJD127

MJD127G

MJD127T4

MJD127T4G

1 2

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Device

100 VOLTS, 20 WATTS

POWER TRANSISTOR

ORDERING INFORMATION

BASE

http://onsemi.com

8 AMPERES

CASE 369C

(Pb−Free)

= Assembly Location

= Year

= Work Week

= 2 or 7

= Pb−Free Package

(Pb−Free)

COLLECTOR 2,4

Package

STYLE 1

SILICON

DPAK

EMITTER 3

Publication Order Number:

2500/Tape & Reel

75 Units/Rail

Shipping

MARKING

DIAGRAM

AYWW

J12xG

MJD122/D

†

Related parts for MJD127T4

MJD127T4 Summary of contents

Page 1

... MJD127 R 71.4 °C/W MJD127G qJA MJD127T4 MJD127T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi.com SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS, 20 WATTS ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage ( mAdc Collector Cutoff Current ( Vdc Collector Cutoff Current (V = 100 Vdc ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS PNP MJD127 20,000 10,000 7000 5000 T = 150°C J 3000 2000 25°C 1000 700 - 55°C 500 300 200 0.1 0.2 0.3 0.5 0 COLLECTOR CURRENT (AMP 2 ...

Page 4

TYPICAL ELECTRICAL CHARACTERISTICS PNP MJD127 + 5 ≤ FE 25°C to 150° for V VC CE(sat 55°C to 25°C 25°C ...

Page 5

R & R VARIED TO OBTAIN DESIRED CURRENT LEVELS MUST BE FAST RECOVERY TYPE, e.g.: 1 ≈ 100 mA 1N5825 USED ABOVE I B ≈ 100 mA MSD6100 USED BELOW ...

Page 6

COLLECTOR PNP BASE ≈ ≈ 120 EMITTER Figure 13. Darlington Schematic http://onsemi.com COLLECTOR NPN BASE ≈ ≈ 120 EMITTER 6 ...

Page 7

... M *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

Related keywords

mjd12
mjd127
mjd122
mjd127t4
mjd122t4
mjd128
mjd127tf
mjd122t4g
mjd122g
MJD127T4 datasheet
MJD127T4 data sheet
MJD127T4 pdf datasheet
MJD127T4 component
MJD127T4 part
MJD127T4 distributor
MJD127T4 RoHS
MJD127T4 datasheet download