MJD127T4 ON Semiconductor, MJD127T4 Datasheet - Page 3

• Manufacturer Part Number: MJD127T4
• Description: TRANS DARL PNP 8A 100V DPAK
• Manufacturer: ON Semiconductor

Specifications of MJD127T4

• Transistor Type: PNP - Darlington
• Current - Collector (ic) (max): 8A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 4V @ 80mA, 8A
• Current - Collector Cutoff (max): 10µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 1000 @ 4A, 4V
• Power - Max: 1.75W
• Frequency - Transition: 4MHz
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MJD127T4OSCT

20,000
10,000
7000
5000
3000
2000
1000
700
500
300
200
2.6
2.2
1.8
1.4
2.5
1.5
0.5
3
1
3
2
1
0.1
0.3
0.1
PNP MJD127
T
V
J
BE(sat)
V
= 150°C
0.5
25°C
BE
- 55°C
0.2
0.2
I
@ V
C
T
J
0.7
@ I
= 2 A
= 25°C
0.3
CE
0.3
C
/I
I
I
C
C
= 4 V
B
1
, COLLECTOR CURRENT (AMP)
, COLLECTOR CURRENT (AMP)
= 250
I
B
0.5
0.5
, BASE CURRENT (mA)
V
CE(sat)
4 A
0.7
0.7
2
@ I
3
1
1
C
/I
TYPICAL ELECTRICAL CHARACTERISTICS
B
= 250
6 A
5
2
2
Figure 3. Collector Saturation Region
7
3
3
T
V
J
10
CE
= 25°C
Figure 2. DC Current Gain
= 4 V
Figure 4. “On” Voltages
5
5
http://onsemi.com
20
7
7
10
30
10
3
20,000
10,000
5000
3000
2000
1000
500
300
200
2.6
2.2
1.8
1.4
2.5
1.5
0.5
3
1
3
2
1
0.3
0.1
0.1
NPN MJD122
T
V
V
J
BE(sat)
CE(sat)
= 150°C
0.5
I
C
- 55°C
0.2
0.2
25°C
V
= 2 A
BE
0.7
@ I
@ I
@ V
0.3
T
0.3
C
C
J
/I
I
/I
I
C
= 25°C
C
B
CE
B
1
, COLLECTOR CURRENT (AMP)
, COLLECTOR CURRENT (AMP)
= 250
= 250
= 4 V
I
B
4 A
0.5
0.5
, BASE CURRENT (mA)
0.7
0.7
2
1
3
1
6 A
5
2
2
7
3
3
T
V
J
10
CE
= 25°C
= 4 V
5
5
20 30
7
7
10
10