BC618 ON Semiconductor, BC618 Datasheet - Page 201

• Manufacturer Part Number: BC618
• Description: TRANSISTOR DARL NPN 55V TO-92
• Manufacturer: ON Semiconductor

Specifications of BC618

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 55V
• Vce Saturation (max) @ Ib, Ic: 1.1V @ 200µA, 200mA
• Current - Collector Cutoff (max): 50nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 200mA, 5V
• Power - Max: 625mW
• Frequency - Transition: 150MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BC618OS

ON Semiconductor Selector Guide − Diodes
TVS/ESD PROTECTION, COMMON ANODE – Two to Five Lines
CM1219 – Common Anode Series; Meets IEC61000−4−2, Level 4, 8 kV contact discharge
CM1240 – Common Anode Series ESD Protection for USB; Meets IEC61000−4−2, Level 4, 8 kV contact discharge
TVS/ESD PROTECTION, COMMON ANODE – Four or Eight Lines
CM1204 – Common Anode Series; Meets IEC61000−4−2, Level 4,
15 kV contact discharge for CM1204
30 kV contact discharge for CM1244
CM1219−02SO
CM1219−02S7
CM1219−03SR
CM1219−04SO
CM1219−04SE
CM1219−04S7
CM1219−05SO
CM1219−05SE
CM1219−05S7
CM1240−F4SE
CM1204−03CP
CM1244−04CP
CM1219−02
1
Device
Device
SOT23−3
Device
SC70−3
V IN
3
2
Number
of lines
Number
of lines
Min
5.5
2
2
3
4
4
4
5
5
5
3
Breakdown Voltage
V
Min Reverse
BR
Nom
6.0
Voltage @
Stand−off
Current LV
Reverse
Leakage
diode I
(V)
1 mA
(V)
6.1
6.1
6.1
6.1
6.1
6.1
6.1
6.1
6.1
(mA)
Max
0.4
V IN
4
1
GND
CM1219−03
R
Max
SOT−143
B2
Max Reverse
Clamp) @ I
Current I
Small Signal
Voltage (+ve
Leakage
Clamping
= 10 mA
ESD_1
(mA)
V
(mA)
0.01
0.01
@I
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
C
VCC
A1
6.8
3
2
(V)
T
D1
D2
http://onsemi.com
R
PP
1
2
3
ESD_2
Max Reverse
A3
Current I
Leakage
(+ve Clamp) @ I
Clamping Voltage
(−ve Clamp) @ I
200
Clamping Voltage
(mA)
0.1
0.1
Small Signal
Small Signal
= 10 mA
ESD_3
V
= 10 mA
V
C1
C
R
6.8
6.8
6.8
6.8
6.8
6.8
6.8
6.8
6.8
C
−0.8
(V)
(V)
6
5
4
SOT23−5/SOT−553
GND
D3
GND
ESD_4
5
1
Signal Clamping
PP
Clamp) @ I
CM1219−04
C3
PP
Voltage (+ve
SC70−5
10 mA
V
V IN
C
6.8
6.8
2
(−ve Clamp) @ I
(V)
CSP−5
Clamping Voltage
Typical Capacitance
Small Signal
PP
@ 3 V (pF)
HV diode
=
10 mA
V
4
3
−0.8
−0.8
−0.8
−0.8
−0.8
−0.8
−0.8
−0.8
−0.8
C
(V)
25
Signal Clamping
(−ve Clamp) @
PP
I
(continued)
PP
Voltage
=
V
= 10 mA
−0.8
−0.8
C
(V)
Capacitance
Capacitance
Pin 1 to 2
@ 3 V (pF)
LV diode
Typical
Typical
@ 0 V
(pF)
4
4
4
4
4
4
4
4
4
SOT23−6/SOT−563
6
6
1
CM1219−05
Capacitance (pF)
SC70−6
V IN
Pin 1 to 2
5
2
Typical
@ 0 V
27
27
SOT23−3
SOT23−5
SOT−553
SOT23−6
SOT−563
SOT−563
SOT143
Package
SC70−3
SC70−5
SC70−6
Package
Type
Type
4
3