BC618 ON Semiconductor, BC618 Datasheet - Page 320

• Manufacturer Part Number: BC618
• Description: TRANSISTOR DARL NPN 55V TO-92
• Manufacturer: ON Semiconductor

Specifications of BC618

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 55V
• Vce Saturation (max) @ Ib, Ic: 1.1V @ 200µA, 200mA
• Current - Collector Cutoff (max): 50nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 200mA, 5V
• Power - Max: 625mW
• Frequency - Transition: 150MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BC618OS

SILICON CONTROLED RECTIFIERS (SCRs) (continued)
Shaded devices denote sensitive gate SCR’s
On−State
Current
IT
RMS
(RMS)
(A)
8.0
12
Blocking
Voltage
V
V
600
800
600
800
400
600
800
800
100
400
600
200
400
400
600
800
800
600
800
800
600
800
400
600
800
DRM
RRM
(V)
50
50
50
,
MCR12DSN−001
−001 = Case 369D
MCR8DSMT4
MCR8DCMT4
MCR8DSNT4
MCR8DCNT4
MCR12DCM
MCR12DSM
MCR12DSN
MCR12DCN
Case 369C
CASE 369C
CASE 369D
Style 4
DPAK
http://onsemi.com
Case 221A−09
K
A
TO−220AB
MCR12LD
MCR12LM
MCR12LN
G
MCR8SM
MCR8SD
MCR8SN
MCR12D
MCR12M
MCR12N
MCR8N
Style 3
319
A
ON Semiconductor Selector Guide − Thyristors
Case 221A−07
K
MCR310−10
A
TO−220AB
MCR218−2
MCR218−4
MCR218−6
G
MCR72−3
MCR72−6
MCR72−8
MCR68−2
C122F1
Style 3
Lead Identification
A
A = Anode
K = Cathode
G = Gate
Current
Surge
60 Hz
I
100
100
100
100
100
100
100
TSM
(A)
80
80
80
80
90
(mA)
Max
I
0.2
0.2
0.2
8.0
0.2
0.2
15
15
25
25
20
30
GT
Max
V
1.0
1.0
1.0
1.0
1.5
1.5
1.5
0.8
1.5
1.0
1.0
1.5
(V)
GT