BC618 ON Semiconductor, BC618 Datasheet - Page 66

• Manufacturer Part Number: BC618
• Description: TRANSISTOR DARL NPN 55V TO-92
• Manufacturer: ON Semiconductor

Specifications of BC618

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 55V
• Vce Saturation (max) @ Ib, Ic: 1.1V @ 200µA, 200mA
• Current - Collector Cutoff (max): 50nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 200mA, 5V
• Power - Max: 625mW
• Frequency - Transition: 150MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BC618OS

BIPOLAR TRANSISTORS
RF TRANSISTORS
MPSH10
MMBTH10L
MMBTH10−4L
MMBT918L
BSV52L
MMBTH10M3
Devices listed in bold italic are ON Semiconductor preferred devices.
SWITCHING TRANSISTORS
2N4401
2N3904
P2N2222A
MPS2222A
MMBT2222AL
MMBT3904L
MMBT4401L
MMBT2369L
MMBT2369AL
Devices listed in bold italic are ON Semiconductor preferred devices.
NPN
NPN
−
−
−
−
MPS2907A
2N4403
2N3906
MMBT2907AL
MMBT3906L
MMBT4403L
PNP
−
−
−
−
−
−
PNP
−
−
−
−
−
−
−
V
(BR)CEO
25
25
25
15
12
25
V
(BR)CEO
60
40
40
40
40
60
40
40
40
40
40
15
15
Max
100
mA
50
I
−
−
−
−
C
http://onsemi.com
Max
mA
600
600
200
600
600
600
600
200
200
600
600
200
200
I
C
ON Semiconductor Selector Guide − Bipolar Transistors
Min
120
60
60
20
40
60
h
Min
100
100
100
100
100
100
100
100
100
100
100
FE
40
40
65
Max
240
120
h
−
−
−
−
FE
Max
300
300
300
300
300
300
300
300
300
300
300
120
120
MHz Min
650
650
800
600
400
650
f
T
MHz Min
200
200
250
300
300
200
300
300
250
250
200
f
−
−
T
C
C
C
C
C
OBO
pF Max
RB
CB
CB
CB
Cap
ns Max
= 0.65
−
= 0.7
= 0.7
= 0.7
= 1.7
300
285
285
100
285
250
300
255
255
T
110
18
18
off
−
TO−236AB, SOT−23
TO−236AB, SOT−23
TO−226AA, TO−92
TO−226AA, TO−92
Case 631AA−01
Case 318−08
Case 318−08
Case 29−11
Case 29−11
Package
Package
SOT−723