DTA114GUAT106 Rohm Semiconductor, DTA114GUAT106 Datasheet

TRANS DGTL PNP 50V 100MA SOT-323

DTA114GUAT106

Manufacturer Part Number
DTA114GUAT106
Description
TRANS DGTL PNP 50V 100MA SOT-323
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of DTA114GUAT106

Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Frequency - Transition
250MHz
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
DTA114GUAT106TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DTA114GUAT106
Manufacturer:
ROHM/罗姆
Quantity:
20 000
-100mA / -50V Digital transistors
(with built-in resistor)
 Applications
Inverter, Interface, Driver
 Features
1) The built-in bias resistors consist of thin-film resistors with
2) Only the on / off conditions need to be set for operation,
3) Higher mounting densities can be achieved.
 Structure
PNP epitaxial planar silicon transistor
(Resistor built-in type)
 Packaging specifications
 Absolute maximum ratings (Ta=25C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction temperature
Storage temperature
Part No.
DTA114GUA
DTA114GKA
c
www.rohm.com
complete isolation to allow positive biasing of the input, and
parasitic effects are almost completely eliminated.
making the device design easy.
DTA114GUA / DTA114GKA
2009 ROHM Co., Ltd. All rights reserved.
Package
Packaging type
Code
Basic ordering unit (pieces)
Parameter
Taping
UMT3
T106
3000
Symbol
V
V
V
Tstg
Taping
Pc
SMT3
Tj
T146
CBO
CEO
EBO
I
3000
C
−55 to +150
Limits
−100
−50
−50
200
150
−5
Unit
mW
mA
°C
°C
V
V
V
1/2
 Dimensions (Unit : mm)
 Inner circuit
R=10k
E : Emitter
C : Collector
B : Base
B
DTA114GUA
DTA114GKA
ROHM : UMT3
EIAJ : SC-70
ROHM : SMT3
EIAJ : SC-59
Ω
R
0.95 0.95
0.65
( 3 )
( 2 )
( 3 )
Abbreviated symbol : K14
Abbreviated symbol : K14
( 2 )
2.0
1.3
1.9
2.9
0.65
C
E
0.3
0.4
( 1 )
( 1 )
0.2
0.15
Each lead has same dimensions
0.15
Each lead has same dimensions
0.9
1.1
0.7
0.8
2009.06 - Rev.B
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector

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DTA114GUAT106 Summary of contents

Page 1

Digital transistors (with built-in resistor) DTA114GUA / DTA114GKA  Applications Inverter, Interface, Driver  Features 1) The built-in bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects ...

Page 2

DTA114GUA / DTA114GKA  Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BV CBO Collector-emitter breakdown voltage BV CEO Emitter-base breakdown voltage BV EBO Collector cutoff current I CBO Emitter cutoff current I EBO Collector-emitter saturation ...

Page 3

No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...

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