DTC143XMT2L Rohm Semiconductor, DTC143XMT2L Datasheet - Page 2

TRANS DGTL NPN 50V 100MA VMT3

DTC143XMT2L

Manufacturer Part Number
DTC143XMT2L
Description
TRANS DGTL NPN 50V 100MA VMT3
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of DTC143XMT2L

Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
4.7K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 10mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Frequency - Transition
250MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
VMT3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
DTC143XMT2LTR
 Absolute maximum ratings (Ta=25C)
 Electrical characteristics (Ta=25C)
 Electrical characteristic curves
∗ Characteristics of built-in transistor
DTC143XM / DTC143XE / DTC143XUA / DTC143XKA
c
www.rohm.com
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Fig.1 Input voltage vs. output current
500m
200m
100m
500m
200m
100m
50m
20m
10m
2009 ROHM Co., Ltd. All rights reserved.
100
5m
2m
1m
50
20
10
100μ 200μ
100μ 200μ
5
2
1
1
Parameter
Fig.4 Output voltage vs. output
(ON characteristics)
Parameter
OUTPUT CURRENT : I
OUTPUT CURRENT : I
current
500μ 1m
500μ 1m
Ta=100°C
−40°C
Ta=−40°C
2m
25°C
2m
100°C
25°C
Symbol
5m 10m 20m 50m 100m
5m 10m 20m
I
C(Max.)
Tstg
V
V
P
I
Tj
CC
O
IN
D
O
O
Symbol
V
R
(A)
(A)
V
V
I
O(off)
V
l
O(on)
G
R
2
O
DTC143XM
I(off)
I(on)
f
I
/R
O
T
I
/l
1
=0.3V
I
I
=20
1
50m 100m
Min.
3.29
2.5
1.7
30
150
DTC143XE
−55 to +150
Typ.
250
0.1
4.7
2.1
−7 to +20
Limits
100
100
150
50
DTC143XUA DTC143XKA
Max.
6.11
0.3
0.3
1.8
0.5
2.6
Fig.2 Output current vs. input voltage
500μ
200μ
100μ
10m
50μ
20μ
10μ
5m
2m
1m
0
200
MHz
Unit
mA
μA
V
V
(OFF characteristics)
0.5
INPUT VOLTAGE : V
V
V
I
V
V
V
V
O
CC
O
I
CC
O
CE
/I
=5V
=0.3V, I
=5V, I
1.0
I
=10mA/0.5mA
=10V, I
=5V, I
=50V, V
2/2
Ta=100°C
Unit
mW
O
mA
°C
°C
1.5
O
V
V
=10mA
O
=100μA
E
Conditions
=20mA
−40°C
I
=−5mA, f=100MHz
=0V
25°C
2.0
I(off)
(V)
V
2.5
CC
=5V
3.0
500
200
100
50
20
10
1k
5
2
1
100μ 200μ
Fig.3 DC current gain vs. output
OUTPUT CURRENT : I
current
500μ 1m
Ta=100°C
2009.06 - Rev.B
−40°C
25°C
2m
Data Sheet
5m 10m 20m
O
(A)
V
O
=5V
50m 100m

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