DTA124XMT2L Rohm Semiconductor, DTA124XMT2L Datasheet - Page 2

• Manufacturer Part Number: DTA124XMT2L
• Description: TRANS DGTL PNP 50V 50MA VMT3
• Manufacturer: Rohm Semiconductor

Specifications of DTA124XMT2L

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 22K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 68 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: VMT3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DTA124XMT2LTR

 Absolute maximum ratings (Ta=25C)
 Electrical characteristics (Ta=25C)
 Electrical characteristic curves
∗ Characteristics of built-in transistor
○
DTA124XM / DTA124XE / DTA124XUA / DTA124XKA
Fig.1 Input voltage vs. output current
c
www.rohm.com
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
−500m
−200m
−100m
−500m
−200m
−100m
−50m
−20m
−10m
−100
−5m
−2m
−1m
2009 ROHM Co., Ltd. All rights reserved.
−50
−20
−10
−5
−2
−1
−1
−100μ −200μ −500μ −1m −2m
−100μ −200μ −500μ −1m −2m
Parameter
Fig.4 Output voltage vs. output
(ON characteristics)
Parameter
OUTPUT CURRENT : I
OUTPUT CURRENT : I
current
Ta=−40°C
100°C
Symbol
−5m −10m −20m
−5m −10m −20m
I
25°C
Ta=100°C
C(Max.)
Tstg
V
V
P
I
Tj
CC
O
IN
D
−40°C
25°C
O
O
Symbol
V
R
(A)
(A)
V
V
I
V
O(off)
O(on)
G
R
2
O
I(off)
I(on)
f
I
DTA124XM
I
/R
O
T
I
=−0.3V
1
I
/I
I
1
−50m −100m
=20
−50m −100m
∗
Min.
−2.5
15.4
1.7
68
150
−
−
−
−
−
DTA124XE
−55 to +150
Typ.
−0.1
250
−40 to +10
2.1
22
−
−
−
−
−
Limits
−100
−50
−50
150
DTA124XUA DTA124XKA
−0.36
Max.
−0.4
−0.3
−0.5
28.6
2.6
Fig.2 Output current vs. input voltage
−
−
−
−500μ
−200μ
−100μ
−10m
−50μ
−20μ
−10μ
−5m
−2m
−1m
−5μ
−2μ
−1μ
0
V
200
MHz
Unit
mA
CC
(OFF characteristics)
μA
kΩ
V
V
−
−
=−5V
−0.5
INPUT VOLTAGE : V
V
V
I
V
V
V
V
O
−1.0
CC
O
I
CC
O
CE
/I
=−5V
=−0.3V, I
=−5V, I
I
=−10mA/−0.5mA
=−10V, I
=−5V, I
=−50V, V
2/2
−1.5
Unit
mW
Ta=100°C
mA
°C
°C
V
V
O
O
=−5mA
Conditions
O
−40°C
=−100μA
E
=−2mA
I
=5mA, f=100MHz
25°C
=0V
−2.0
−
−
I(off)
(V)
−2.5
−3.0
500
200
100
50
20
10
1k
5
2
1
−100μ −200μ −500μ −1m −2m
Fig.3 DC current gain vs. output
OUTPUT CURRENT : I
current
2009.06 - Rev.B
Data Sheet
−5m −10m −20m
Ta=100°C
−40°C
25°C
O
(A)
V
O
=−5V
−50m −100m