DTA114TMT2L Rohm Semiconductor, DTA114TMT2L Datasheet - Page 2

• Manufacturer Part Number: DTA114TMT2L
• Description: TRANS PNP 50V 100MA VMT3
• Manufacturer: Rohm Semiconductor

Specifications of DTA114TMT2L

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 1mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 1mA, 10mA
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: VMT3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DTA114TMT2L; DTA114TMT2LTR

 Packaging specifications
 Absolute maximum ratings (Ta=25C)
 Electrical characteristics (Ta=25C)
 Electrical characteristic curves
○
DTA114TM / DTA114TE / DTA114TUA / DTA114TKA
∗ Characteristics of built-in transistor
Part No.
DTA114TM
DTA114TE
DTA114TUA
DTA114TKA
c
www.rohm.com
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
500
200
100
50
20
10
1k
2009 ROHM Co., Ltd. All rights reserved.
Fig.1 DC current gain vs. collector
−100μ
5
2
1
−200μ
COLLECTOR CURRENT : I
Parameter
current
−500μ
Package
Package type
Code
Basic ordering
unit (pieces)
Ta=100°C
Parameter
−1m
−40°C
25°C
−2m
−5m
−10m
−20m
C
V
Taping
(A)
VMT3
CE
8000
T2L
Symbol
=−5V
−50m
−
−
−
V
V
V
Tstg
P
CBO
CEO
EBO
Tj
I
−100m
C
C
Symbol
BV
BV
BV
V
I
I
h
CBO
CE(sat)
EBO
R
f
Taping
CBO
CEO
FE
EMT3
EBO
T
3000
1
DTA114TM
TL
−
−
−
∗
−500m
−200m
−100m
Min.
150
−50m
−20m
−10m
−50
−50
100
−5m
−2m
−1m
−5
−
−
−
7
−
−1
−100μ
Taping
Fig.2 Collector-emitter saturation
UMT3
DTA114TE
T106
3000
−
−
−
−55 to +150
−200μ
Typ.
COLLECTOR CURRENT : I
250
250
Limits
10
−100
voltage vs. collector current
−
−
−
−
−
−
−50
−50
150
−5
−500μ
DTA114TUA DTA114TKA
Taping
SMT3
T146
3000
−1m
−
−
−
Max.
−0.5
−0.5
−0.3
600
Ta=100°C
13
−
−
−
−
−2m
200
−40°C
25°C
−5m
MHz
Unit
μA
μA
kΩ
2/2
V
V
V
V
−
−10m
−20m
C
I
I
I
V
V
I
V
V
l
C
C
E
C
C
(A)
CB
EB
CE
CE
=−50μA
=−50μA
=−1mA
/I
/l
Unit
mW
mA
B
°C
°C
B
−50m
V
V
V
=20
=−4V
=−50V
=−5V, I
=−10V, I
=−10mA/−1mA
−100m
C
=−1mA
E
=5mA, f=100MHz
Conditions
−
2009.06 - Rev.B
Data Sheet