DTA114EETL Rohm Semiconductor, DTA114EETL Datasheet - Page 2

• Manufacturer Part Number: DTA114EETL
• Description: TRANS PNP 50V 50MA SOT-416
• Manufacturer: Rohm Semiconductor

Specifications of DTA114EETL

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SC-75-3, SOT-416
• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: 50V
• Power Dissipation Pd: 150mW
• Dc Collector Current: 100mA
• Transistor Case Style: EMT
• No. Of Pins: 3
• Svhc: No SVHC (18-Jun-2010)
• Application: RoHS Compliant
• Dc Current Gain Hfe: 30
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DTA114EETL; DTA114EETLTR

Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
○
DTA114EB / DTA114EM / DTA114EE / DTA114EUA / DTA114EKA
∗ Characteristics of built-in transistor
c
Type
DTA114EB
DTA114EM
DTA114EE
DTA114EUA
DTA114EKA
www.rohm.com
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Packaging specifications
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
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Parameter
Parameter
Package
Packaging type
Code
Basic ordering
unit (pieces)
Symbol
I
C(Max.)
Tstg
V
V
Pd
I
Tj
CC
O
IN
Symbol
R
V
V
V
I
O(off)
R
O(on)
G
2
Taping
VMN3
I(off)
I(on)
f
I
8000
/R
T
I
T2L
1
I
DTA114EB
∗
−
−
−
−
1
Min.
0.8
−3
30
−
−
−
−
7
−
Taping
VMT3
8000
T2L
−
−
−
−
DTA114EM
150
Typ.
250
10
−
−
−
−
−
−
1
Taping
EMT3
−0.88
3000
Max.
−0.5
−0.3
−0.5
TL
1.2
−
−
−
−
13
−
−
−
−55 to +150
−40 to +10
DTA114EE
Limits
−100
−50
−50
150
MHz
Unit
mA
µA
kΩ
Taping
UMT3
V
V
−
−
T106
3000
−
−
−
−
V
V
I
V
V
V
V
O
DTA114EUA DTA114EKA
CC
O
I
CC
O
CE
/I
=−5V
=−0.3V, I
=−5V, I
I
Taping
=−10mA/−0.5mA
=−10V, I
=−5V, I
=−50V, V
SMT3
T146
3000
2/3
−
−
−
−
Conditions
200
O
O
=−5mA
O
=−100µA
E
=−10mA
I
=5mA, f=100MHz
=0V
−
−
R
Unit
mW
mA
1
°C
°C
Equivalent circuit
V
V
=R
IN
2
IN
=10kΩ
R
1
R
2
GND(+)
OUT
OUT
GND(+)
2009.03 - Rev.C
Data Sheet