DTA114YETL Rohm Semiconductor, DTA114YETL Datasheet - Page 2

• Manufacturer Part Number: DTA114YETL
• Description: TRANS PNP 50V 70MA SOT-416
• Manufacturer: Rohm Semiconductor

Specifications of DTA114YETL

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 68 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SC-75-3, SOT-416
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DTA114YETL; DTA114YETLTR

 Absolute maximum ratings (Ta=25C)
 Electrical characteristics (Ta=25C)
 Electrical characteristic curves
∗ Characteristics of built-in transistor
○
DTA114YM / DTA114YE / DTA114YUA / DTA114YKA
c
www.rohm.com
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Fig.1 Input voltage vs. output current
−500m
−200m
−100m
−500m
−200m
−100m
−50m
−20m
−10m
−100
−5m
−2m
−1m
2009 ROHM Co., Ltd. All rights reserved.
−50
−20
−10
−100μ
−100μ
−5
−2
−1
−1
Fig.4 Output voltage vs. output
Parameter
−200μ
−200μ
(ON characteristics)
Parameter
Ta=−40°C
OUTPUT CURRENT : I
OUTPUT CURRENT : I
−500μ
−500μ
current
100°C
25°C
−1m
−1m
−2m
−2m
Ta=100°C
−40°C
25°C
−5m
−5m
Symbol
I
C(Max.)
Tstg
V
Pd
V
I
Tj
−10m
−10m
CC
O
I
O
O
Symbol
−20m
−20m
V
R
(A)
(A)
V
V
I
V
O(off)
l
O(on)
G
R
2
O
O
I(off)
I(on)
f
DTA114YM
I
/R
T
I
=−0.3V
/l
1
I
I
−50m
=20
−50m
∗
1
−100m
−100m
Min.
−1.4
3.7
68
150
−
−
−
−
7
−
DTA114YE
−55 to +150
Typ.
−0.1
250
4.7
−40 to +6
10
−
−
−
−
−
Limits
−100
−50
−70
150
DTA114YUA DTA114YKA
−0.88
Max.
−0.3
−0.3
−0.5
5.7
13
−
−
−
Fig.2 Output current vs. input voltage
−500μ
−200μ
−100μ
−10m
−5m
−2m
−50μ
−20μ
−10μ
−1m
−5μ
−2μ
−1μ
0
200
MHz
Unit
mA
μA
kΩ
V
V
−
−
(OFF characteristics)
−0.5
INPUT VOLTAGE : V
V
V
I
V
V
V
V
O
CC
O
I
CC
O
CE
/I
=−5V
−1.0
=−0.3V, I
=−5V, I
I
=−5mA/−0.25mA
=−10V, I
=−5V, I
=−50V, V
2/2
Ta=100°C
Unit
mW
−1.5
mA
−40°C
°C
°C
V
V
O
25°C
O
=−5mA
Conditions
O
=−100μA
E
=−1mA
I
=5mA, f=100MHz
=0V
−2.0
−
−
I(off)
(V)
V
−2.5
CC
=−5V
−3.0
500
200
100
1k
50
20
10
−100μ
5
2
1
Fig.3 DC current gain vs. output
−200μ
OUTPUT CURRENT : I
−500μ
current
Ta=100°C
−1m
2009.06 - Rev.B
−40°C
25°C
−2m
Data Sheet
−5m
−10m
O
−20m
(A)
V
O
=−5V
−50m
−100m