DTC114TMT2L Rohm Semiconductor, DTC114TMT2L Datasheet - Page 2

• Manufacturer Part Number: DTC114TMT2L
• Description: TRANS NPN 50V 100MA VMT3
• Manufacturer: Rohm Semiconductor

Specifications of DTC114TMT2L

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 1mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 1mA, 10mA
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: VMT3
• Digital: VMT3
• Collector Emitter Voltage V(br)ceo: 50V
• Power Dissipation Pd: 150mW
• Dc Collector Current: 10mA
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: VMT
• No. Of: RoHS Compliant
• Transistor Polarity: NPN
• Dc Current Gain Hfe: 250
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DTC114TMT2L; DTC114TMT2LTR

z Packaging specifications
z z Absolute maximum ratings (Ta=25qC)
z z Electrical characteristics (Ta=25qC)
z z Electrical characteristic curves
DTC114TM / DTC114TE / DTC114TUA / DTC114TKA
∗ Characteristics of built-in transistor
Part No.
DTC114TM
DTC114TE
DTC114TUA
DTC114TKA
www.rohm.com
c
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
500
200
100
50
20
10
1k
2009 ROHM Co., Ltd. All rights reserved.
Fig.1 DC current gain vs. collector
5
2
1
100μ 200μ
COLLECTOR CURRENT : I
Parameter
current
500μ 1m
Package
Package type
Code
Basic ordering
unit (pieces)
Parameter
2m
Ta=100°C
5m 10m 20m
−40°C
25°C
C
V
Taping
(A)
VMT3
8000
CE
T2L
Symbol
= 5V
−
−
−
50m 100m
V
V
V
Tstg
P
CBO
CEO
EBO
Tj
I
C
C
Symbol
BV
BV
BV
V
I
I
h
CBO
CE(sat)
EBO
R
f
Taping
CBO
CEO
FE
EMT3
EBO
T
3000
1
DTA114TM
TL
−
−
−
∗
150
Min.
500m
200m
100m
100
50m
20m
10m
50
50
5m
2m
1m
5
−
−
−
7
−
Taping
100μ 200μ
DTA114TE
1
UMT3
Fig.2 Collector-emitter saturation
T106
3000
−
−
−
−55 to +150
Typ.
COLLECTOR CURRENT : I
250
250
Limits
10
voltage vs. collector current
−
−
−
−
−
−
100
150
50
50
5
500μ 1m
DTA114TUA DTA114TKA
Taping
SMT3
T146
3000
−
−
−
Max.
600
0.5
0.5
0.3
13
Ta=100°C
−
−
−
−
2m
200
−40°C
25°C
5m 10m 20m
MHz
Unit
μA
μA
kΩ
2/2
V
V
V
V
−
C
I
I
I
V
V
I
V
V
C
C
E
C
l
(A)
C
CB
EB
CE
CE
=50μA
=50μA
=1mA
/I
Unit
mW
/l
mA
°C
°C
B
B
V
V
V
=4V
=50V
=5V, I
=10V, I
=10
50m 100m
=10mA/1mA
C
=1mA
E
=−5mA, f=100MHz
Conditions
−
2009.06 - Rev.C
Data Sheet