DTC114EUAT106 Rohm Semiconductor, DTC114EUAT106 Datasheet - Page 2

• Manufacturer Part Number: DTC114EUAT106
• Description: TRAN DIGITL NPN 50V 50MA SOT-323
• Manufacturer: Rohm Semiconductor

Specifications of DTC114EUAT106

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 50mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DTC114EUAT106TR

○
DTC114EB / DTC114EM / DTC114EE / DTC114EUA / DTC114EKA
∗ Characteristics of built-in transistor
c
Part No.
DTC114EB
DTC114EM
DTC114EE
DTC114EUA
DTC114EKA
www.rohm.com
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Packaging specifications
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
2009 ROHM Co., Ltd. All rights reserved.
Parameter
Parameter
Package
Packaging type
Code
Basic ordering
unit (pieces)
Symbol
I
C(Max.)
Tstg
V
V
P
Tj
I
CC
O
IN
D
Symbol
R
V
V
V
I
O(off)
O(on)
R
G
2
Taping
I(off)
I(on)
f
VMN3
I
DTC114EB
/R
8000
T
I
1
T2L
I
−
−
−
−
1
∗
Min.
0.8
30
−
3
−
−
−
7
−
Taping
VMT3
DTC114EM
8000
T2L
−
−
−
−
150
Typ.
250
0.1
10
−
−
−
−
−
1
−55 to +150
−10 to +40
Taping
EMT3
DTC114EE
3000
Limits
Max.
TL
0.88
−
−
−
−
100
150
0.5
0.3
0.5
1.2
13
50
50
−
−
−
MHz
DTC114EUA DTC114EKA
Unit
mA
Taping
µA
kΩ
UMT3
V
V
T106
3000
−
−
−
−
−
−
V
V
I
V
V
V
V
O
200
CC
O
I
CC
O
CE
/I
=5V
=0.3V, I
=5V, I
I
=10mA/0.5mA
Taping
=5V, I
=50V, V
=10V, I
SMT3
T146
3000
2/3
−
−
−
−
O
O
=5mA
O
=100µA
E
Conditions
=10mA
I
=−5mA, f=100MHz
=0V
−
−
Unit
mW
mA
°C
°C
V
V
R
IN
1
Equivalent circuit
=R
IN
2
=10kΩ
R
1
R
2
GND
GND
OUT
OUT
2009.08 - Rev.D
Data Sheet