DTC114EMT2L Rohm Semiconductor, DTC114EMT2L Datasheet - Page 2
![TRANS NPN 50V 50MA VMT3](/photos/5/48/54804/vmt3_pkg_sml.jpg)
DTC114EMT2L
Manufacturer Part Number
DTC114EMT2L
Description
TRANS NPN 50V 50MA VMT3
Manufacturer
Rohm Semiconductor
Datasheet
1.DTC114EKAT146.pdf
(4 pages)
Specifications of DTC114EMT2L
Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
50mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Frequency - Transition
250MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
VMT3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
DTC114EMT2L
DTC114EMT2LTR
DTC114EMT2LTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DTC114EMT2L
Manufacturer:
ROHM
Quantity:
11 512
Part Number:
DTC114EMT2L
Manufacturer:
ROHM/罗姆
Quantity:
20 000
○
DTC114EB / DTC114EM / DTC114EE / DTC114EUA / DTC114EKA
∗ Characteristics of built-in transistor
c
Part No.
DTC114EB
DTC114EM
DTC114EE
DTC114EUA
DTC114EKA
www.rohm.com
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Packaging specifications
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
2009 ROHM Co., Ltd. All rights reserved.
Parameter
Parameter
Package
Packaging type
Code
Basic ordering
unit (pieces)
Symbol
I
C(Max.)
Tstg
V
V
P
Tj
I
CC
O
IN
D
Symbol
R
V
V
V
I
O(off)
O(on)
R
G
2
Taping
I(off)
I(on)
f
VMN3
I
DTC114EB
/R
8000
T
I
1
T2L
I
−
−
−
−
1
∗
Min.
0.8
30
−
3
−
−
−
7
−
Taping
VMT3
DTC114EM
8000
T2L
−
−
−
−
150
Typ.
250
0.1
10
−
−
−
−
−
1
−55 to +150
−10 to +40
Taping
EMT3
DTC114EE
3000
Limits
Max.
TL
0.88
−
−
−
−
100
150
0.5
0.3
0.5
1.2
13
50
50
−
−
−
MHz
DTC114EUA DTC114EKA
Unit
mA
Taping
µA
kΩ
UMT3
V
V
T106
3000
−
−
−
−
−
−
V
V
I
V
V
V
V
O
200
CC
O
I
CC
O
CE
/I
=5V
=0.3V, I
=5V, I
I
=10mA/0.5mA
Taping
=5V, I
=50V, V
=10V, I
SMT3
T146
3000
2/3
−
−
−
−
O
O
=5mA
O
=100µA
E
Conditions
=10mA
I
=−5mA, f=100MHz
=0V
−
−
Unit
mW
mA
°C
°C
V
V
R
IN
1
Equivalent circuit
=R
IN
2
=10kΩ
R
1
R
2
GND
GND
OUT
OUT
2009.08 - Rev.D
Data Sheet