DTC123EMT2L Rohm Semiconductor, DTC123EMT2L Datasheet

TRANS DGTL NPN 50V 100MA VMT3

DTC123EMT2L

Manufacturer Part Number
DTC123EMT2L
Description
TRANS DGTL NPN 50V 100MA VMT3
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of DTC123EMT2L

Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
2.2K
Resistor - Emitter Base (r2) (ohms)
2.2K
Dc Current Gain (hfe) (min) @ Ic, Vce
20 @ 20mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Frequency - Transition
250MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
VMT3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
DTC123EMT2LTR
100mA / 50V Digital transistors
(with built-in resistors)
Inverter, Interface, Driver
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the
2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input.
3) Only the on / off conditions need to be set for operation, making the device design easy.
NPN epitaxial planar silicon transistor (Resistor built-in type)
c
Type
DTC123EM
DTC123EE
DTC123EUA
DTC123EKA
www.rohm.com
Applications
Features
Structure
Dimensions (Unit : mm)
Packaging specifications
DTC123EM
They also have the advantage of almost completely eliminating parasitic effects.
equivalent circuit).
DTC123EE
ROHM : VMT3
DTC123EM / DTC123EE / DTC123EUA / DTC123EKA
2009 ROHM Co., Ltd. All rights reserved.
ROHM : EMT3
Package
Packaging type
Code
Basic ordering
unit (pieces)
0.22
0.2
Abbreviated symbol : 22
Abbreviated symbol : 22
( 3 )
(3)
0.5
( 2 )
0.32
0.4 0.4
1.6
1.0
( 1 )
1.2
0.8
0.5
( 2 )
0.3
( 1 )
0.2
Taping
VMT3
8000
T2L
0.15
0.5
0.7
0.55
0.13
Taping
EMT3
3000
TL
(1) IN
(2) GND
(3) OUT
(1) GND
(2) IN
(3) OUT
Taping
UMT3
T106
3000
Taping
SMT3
T146
3000
DTC123EUA
DTC123EKA
ROHM : UMT3
EIAJ : SC-70
ROHM : SMT3
EIAJ : SC-59
1/2
R
Equivalent circuit
1
0.95 0.95
( 2 )
=R
( 3 )
0.65
IN
( 3 )
Abbreviated symbol : 22
Abbreviated symbol : 22
( 2 )
2.0
1.3
1.9
2.9
2
IN
0.65
=2.2kΩ
0.3
0.4
R
( 1 )
1
R
( 1 )
2
0.2
GND
0.15
0.15
0.9
1.1
0.7
0.8
OUT
GND
OUT
(1) GND
(2) IN
(3) OUT
(1) GND
(2) IN
(3) OUT
2009.03 - Rev.B

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DTC123EMT2L Summary of contents

Page 1

Digital transistors (with built-in resistors) DTC123EM / DTC123EE / DTC123EUA / DTC123EKA Applications Inverter, Interface, Driver Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit). ...

Page 2

DTC123EM / DTC123EE / DTC123EUA / DTC123EKA Absolute maximum ratings (Ta=25°C) Parameter Symbol DTC123EM Supply voltage V CC Input voltage Output current I C(Max.) Power dissipation Pd 150 Junction temperature Tj Storage temperature Tstg Electrical characteristics ...

Page 3

No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...

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