DTC144TUAT106 Rohm Semiconductor, DTC144TUAT106 Datasheet - Page 2

• Manufacturer Part Number: DTC144TUAT106
• Description: TRANS NPN 50V 100MA SOT-323
• Manufacturer: Rohm Semiconductor

Specifications of DTC144TUAT106

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 1mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 5mA
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Digital: UMT
• Collector Emitter Voltage V(br)ceo: 50V
• Power Dissipation Pd: 200mW
• Dc Collector Current: 5mA
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-323
• No. Of: RoHS Compliant
• Transistor Polarity: NPN
• Dc Current Gain Hfe: 250
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DTC144TUAT106; DTC144TUAT106TR

 Packaging specifications
 Absolute maximum ratings (Ta=25C)
 Electrical characteristics (Ta=25C)
 Electrical characteristic curves
∗
○
DTC144TM / DTC144TE / DTC144TUA / DTC144TKA
c
Part No.
DTC144TM
DTC144TE
DTC144TUA
DTC144TKA
www.rohm.com
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
Characteristics of built-in transistor
500
200
100
1k
50
20
10
2009 ROHM Co., Ltd. All rights reserved.
Fig.1 DC current gain vs. collector
5
2
1
100μ 200μ
Parameter
COLLECTOR CURRENT : I
current
Ta=100°C
500μ 1m
Package
Packaging type
Code
Basic ordering
unit (pieces)
Parameter
−40°C
25°C
2m
5m 10m 20m
C
Symbol
(A)
V
V
V
V
Tstg
Taping
CE
VMT3
Pc
8000
CBO
CEO
EBO
I
Tj
50m 100m
T2L
C
= 5V
−
−
−
Symbol
V
BV
BV
BV
DTC144TM
I
I
CE(sat)
h
CBO
EBO
R
f
FE
CBO
CEO
EBO
T
Taping
1
EMT3
3000
∗
TL
−
−
−
150
Min.
32.9
100
500m
200m
100m
50
50
50m
20m
10m
5
−
−
−
−
DTC144TE
5m
2m
1m
Fig.2 Collector-emitter saturation
100μ 200μ
1
Taping
−55 to +150
UMT3
T106
3000
Ta=100°C
Typ.
250
250
−
−
−
COLLECTOR CURRENT : I
Limits
47
voltage vs. collector current
−
−
−
−
−
−
−40°C
100
150
50
50
25°C
5
500μ 1m
DTC144TUA DTC144TKA
Max.
61.1
600
0.5
0.5
0.3
Taping
SMT3
−
−
−
−
T146
3000
2m
−
−
−
200
MHz
5m 10m 20m
Unit
μA
μA
kΩ
V
V
V
V
−
2/2
I
I
I
V
V
I
V
V
C
C
C
E
C
l
(A)
=50μA
CB
EB
CE
CE
C
=50μA
=1mA
/I
/l
B
B
=4V
=10V, I
Unit
mW
=50V
=5V, I
50m 100m
mA
=10
=5mA/0.5mA
°C
°C
V
V
Conditions
C
E
=1mA
= −5mA, f=100MHz
−
2009.06 - Rev.B
Data Sheet