DTD123EKT146 Rohm Semiconductor, DTD123EKT146 Datasheet - Page 2

• Manufacturer Part Number: DTD123EKT146
• Description: TRANS NPN 50V 500MA SOT-346
• Manufacturer: Rohm Semiconductor

Specifications of DTD123EKT146

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 2.2K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 39 @ 50mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 50V
• Power Dissipation Pd: 200mW
• Dc Collector Current: 500mA
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-346
• Dc Current Gain Hfe: 39
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DTD123EKT146; DTD123EKT146TR

 Electrical characteristics (Ta=25C)
 Electrical characteristic curves
Fig.4 Output voltage vs. output current
○
DTD123EK
∗
c
www.rohm.com
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Characteristics of built-in transistor.
500m
200m
100m
Fig.1 Input voltage vs. output current
500m
200m
100m
2009 ROHM Co., Ltd. All rights reserved.
100
50m
20m
10m
50
20
10
5m
2m
1m
500 μ 1m
5
2
1
1
500μ 1m
(ON characteristics)
Parameter
Ta= −40 C
OUTPUT CURRENT : I
2m
OUTPUT CURRENT : I
2m
100 C
Ta=100 C
25 C
5m 10m 20m
5m 10m 20m
−40 C
25 C
50m 100m 200m 500m
50m
O
O
100m 200m
(A)
(A)
V
l
O
O
=0.3V
Symbol
/l
I
R
V
=20
V
V
I
O(off)
O(on)
R
2
G
I(off)
I(on)
f
I
/R
T
I
1
500m
I
∗
1
1.54
Min.
0.8
39
−
3
−
−
−
−
Typ.
200
0.1
2.2
−
−
−
−
−
1
Fig.2 Output current vs. input voltage
500μ
200μ
100μ
10m
50μ
20μ
10μ
5m
2m
1m
5μ
2μ
1μ
0
Max.
2.86
Ta=100 C
0.5
0.3
3.8
0.5
1.2
−
−
−
(OFF characteristics)
−40 C
0.5
25 C
INPUT VOLTAGE : V
MHz
Unit
mA
μA
kΩ
1.0
V
V
−
−
2/2
1.5
V
V
I
V
V
V
V
O
CC
O
I
CC
O
CE
/I
= 5V
= 0.3V, I
= 5V, I
I
= 50mA/2.5mA
= 5V, I
= 50V, V
= 10V, I
2.0
I(off)
(V)
O
V
2.5
= 50mA
CC
O
E
O
= 100μA
=5V
I
= −50mA, f = 100MHz
= 20mA
= 0V
Conditions
3.0
−
−
500
200
100
50
20
10
1k
500μ
5
2
1
1m
Fig.3 DC current gain
OUTPUT CURRENT : I
2m
Ta=100 C
vs. output current
5m 10m 20m
2009.06 - Rev.C
−40 C
25 C
Data Sheet
50m
O
100m 200m
(A)
V
O
=5V
500m