DTB123YKT146 Rohm Semiconductor, DTB123YKT146 Datasheet
DTB123YKT146
Manufacturer Part Number
DTB123YKT146
Description
TRAN DIGIT PNP 50V 500MA SOT-346
Manufacturer
Rohm Semiconductor
Specifications of DTB123YKT146
Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
2.2K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
56 @ 50mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 2.5mA, 50mA
Frequency - Transition
200MHz
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-59-3, SMT3, SOT-346, TO-236
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
50V
Power Dissipation Pd
200mW
Dc Collector Current
500mA
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOT-346
Dc Current Gain Hfe
56
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
DTB123YKT146TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DTB123YKT146
Manufacturer:
ROHM/罗姆
Quantity:
20 000
500mA / 50V Digital transistors
(with built-in resistor)
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
2) The bias resistors consist of thin-film resistors with
3) Only the on / off conditions need to be set for operation,
Structure
PNP epitaxial planar silicon transistor
(Resistor built-in type)
Packaging specifications
Absolute maximum ratings (Ta=25C)
○
Part No.
DTB123YU
DTB123YK
c
www.rohm.com
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
inverter circuit without connecting external input resistors
(see equivalent circuit).
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
making the device design easy.
DTB123YU / DTB123YK
2009 ROHM Co., Ltd. All rights reserved.
Parameter
Package
Packaging type
Code
Basic ordering
unit (pieces)
Symbol
Tstg
V
V
P
I
Tj
CC
C
IN
D
Taping
UMT3
DTB123YU DTB123YK
T106
3000
−
−55 to +150
−12 to +5
Limits
−500
−50
200
150
Taping
SMT3
T146
3000
−
Unit
mW
mA
°C
°C
V
V
1/2
Dimensions (Unit : mm)
Inner circuit
R
1
IN
DTB123YU
DTB123YK
=2.2kΩ, R
ROHM : UMT3
EIAJ : SC-70
ROHM : SMT3
EIAJ : SC-59
IN
R
1
R
2
2
=10kΩ
GND(
0.65
( 3 )
Abbreviated symbol : F52
Abbreviated symbol : F52
0.95 0.95
( 2 )
( 2 )
( 3 )
2.0
1.3
0.65
1.9
2.9
+
0.3
)
( 1 )
0.4
OUT
OUT
GND(
( 1 )
+
)
0.2
Each lead has same dimensions
Each lead has same dimensions
0.15
0.9
0.7
0.15
1.1
0.8
2009.06 - Rev.E
(1) GND
(2) IN
(3) OUT
(1) GND
(2) IN
(3) OUT
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DTB123YKT146 Summary of contents
Page 1
Digital transistors (with built-in resistor) DTB123YU / DTB123YK Applications Inverter, Interface, Driver Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias ...
Page 2
DTB123YU / DTB123YK Electrical characteristics (Ta=25C) Parameter Symbol Min. − V I(off) Input voltage −2 V I(on) − Output voltage V O(on) − Input current I I − Output current I O(off) DC current gain Input ...
Page 3
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...