DTD113ZKT146 Rohm Semiconductor, DTD113ZKT146 Datasheet - Page 2

• Manufacturer Part Number: DTD113ZKT146
• Description: TRAN DIGIT NPN 50V 500MA SOT-346
• Manufacturer: Rohm Semiconductor

Specifications of DTD113ZKT146

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 82 @ 50mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 50V
• Power Dissipation Pd: 200mW
• Dc Collector Current: 500mA
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-346
• Dc Current Gain Hfe: 82
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DTD113ZKT146TR

 Absolute maximum ratings (Ta=25C)
 Electrical characteristics (Ta=25C)
○
DTD113ZK/DTD113ZU
∗
c
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
www.rohm.com
Characteristics of built-in transistor
2009 ROHM Co., Ltd. All rights reserved.
Parameter
Parameter
Symbol
Tstg
V
V
Symbol
P
I
Tj
V
R
CC
C
V
V
I
IN
D
O(off)
O(on)
G
R
2
I(off)
I(on)
f
I
/R
T
I
1
I
∗
1
DTD113ZU DTD113ZK
Min.
1.5
0.7
82
−
−
−
−
8
−
−55 to +150
−5 to +10
Limits
Typ.
200
0.1
500
200
150
10
−
−
−
−
−
1
50
Max.
0.3
0.3
7.2
0.5
1.3
12
−
−
−
MHz
Unit
mA
μA
kΩ
V
V
−
−
Unit
mW
mA
°C
°C
V
V
V
V
I
V
V
V
V
O
CC
O
I
CC
O
CE
/I
= 5V
= 0.3V, I
= 5V, I
I
= 50mA/2.5mA
= 5V, I
= 50V, V
= 10V, I
2/3
O
= 50mA
O
E
O
= 100μA
I
=− 50mA, f = 100MHz
Conditions
= 20mA
= 0V
−
−
2009.05 - Rev.C
Data Sheet