DTA115TKAT146 Rohm Semiconductor, DTA115TKAT146 Datasheet - Page 2

• Manufacturer Part Number: DTA115TKAT146
• Description: TRANS PNP 50V 100MA SOT-346 TR
• Manufacturer: Rohm Semiconductor

Specifications of DTA115TKAT146

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 100K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 1mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 100µA, 1mA
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

 Absolute maximum ratings (Ta=25C)
 Electrical characteristics (Ta=25C)
 Electrical characteristic curves
∗Characteristics of built-in transistor
○
DTA115TM / DTA115TE / DTA115TUA / DTA115TKA
Collector power
dissipation
Collector current
c
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Junction temperature
Storage temperature
www.rohm.com
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
500
200
100
2009 ROHM Co., Ltd. All rights reserved.
50
20
10
1k
5
2
1
10μ
V
Fig.1 DC current gain
CE
20μ
=5V
COLLECTOR CURRENT : I
50μ 100μ 200μ
vs. Collector current
Parameter
Ta=25°C
DTA115TM / DTA115TE
DTA115TUA / DTA115TKA
Parameter
500μ 1m
Ta= −40°C
Ta=100°C
2m
C
(A)
5m
10m
Symbol
BV
BV
V
BV
I
I
CE(sat)
h
CBO
EBO
R
f
FE
CBO
CEO
T
EBO
1
∗
Symbol
Min.
−50
−50
100
Fig.2 Collector-Emitter saturation voltage
V
V
V
Tstg
−5
70
P
−
−
−
−
CBO
CEO
EBO
I
Tj
C
500m
200m
100m
C
50m
20m
10m
5m
2m
1m
1
10μ
vs. Collector current
I
C
/I
20μ
B
Typ.
250
100
250
=10/1
−
−
−
−
−
−
−55 to +150
COLLECTOR CURRENT : I
50μ 100μ 200μ
Limits
−100
−50
−50
150
200
150
−5
Ta=100°C
2/2
Max.
−0.5
−0.5
−0.3
600
130
−
−
−
−
500μ 1m
Ta= −40°C
MH
Unit
Unit
mW
mA
kΩ
μA
μA
°C
°C
V
V
V
V
−
V
V
V
Ta=25°C
2m
C
Z
(A)
5m
I
I
I
V
V
I
I
V
C
C
E
C
C
10m
CB
EB
CE
= −50μA
= −1mA
= −50μA
/I
= −1mA , V
B
= −4V
= −50V
= −10V , I
= −1mA/−0.1mA
Conditions
CE
E
=5mA , f=100MH
= −5V
−
Z
2009.06 - Rev.C
Data Sheet