UMF32NTR Rohm Semiconductor, UMF32NTR Datasheet - Page 4

• Manufacturer Part Number: UMF32NTR
• Description: TRANS PNP DUAL 50V UMT6
• Manufacturer: Rohm Semiconductor

Specifications of UMF32NTR

• Transistor Type: PNP Pre-Biased, N-Channel
• Applications: General Purpose
• Voltage - Rated: 50V PNP, 30V N Channel
• Current Rating: 100mA PNP, 100mA N-Channel
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Module Configuration: Dual
• Transistor Polarity: PNP + N MOSFET
• Collector Emitter Voltage V(br)ceo: -50V
• Gain Bandwidth Ft Typ: 250MHz
• Power Dissipation Pd: 150mW
• Dc Collector Current: -100mA
• Operating: RoHS Compliant
• Dc Current Gain Hfe: 250
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig.9
○
EMF32 / UMF32N
c
www.rohm.com
200m
100m
0.5m
0.2m
0.1m
50m
20m
10m
5m
2m
1m
2010 ROHM Co., Ltd. All rights reserved.
Fig.12 Reverse drain current vs.
0
9
8
7
6
5
4
3
2
1
0
−50
Static drain-source on-state
resistance vs. channel temperature
SOURCE-DRAIN VOLTAGE : V
V
CHANNEL TEMPERATURE : Tch (°C)
GS
−25
=4V
source-drain voltage ( ΙΙ )
I
0
0.5
D
=100mA
25
0V
50
1
75
I
D
=50mA
100 125
Ta=25°C
Pulsed
SD
V
Pulsed
(V)
GS
=4V
1.5
150
Fig.10 Forward transfer admittance vs.
0.5
50
20
10
0.005
0.002
0.001
5
2
1
0.05
0.02
0.01
0.1
0.5
0.2
0.1
Fig.13 Typical capacitance vs.
0.0001
DRAIN-SOURCE VOLTAGE : V
0.2
drain current
0.0002 0.0005 0.001 0.002
Ta=−25°C
0.5
drain-source voltage
DRAIN CURRENT : I
125°C
25°C
75°C
1
2
0.005 0.01 0.02
4/4
5
10
D
0.05
(A)
Ta =25°C
f=1MH
V
DS
C
C
GS
20
C
oss
0.1 0.2
rss
V
Pulsed
(V)
iss
=0V
DS
Z
=3V
50
0.5
200m
100m
0.5m
0.2m
0.1m
1000
50m
20m
10m
500
200
100
5m
2m
1m
50
20
10
5
2
0.1
0
Fig.11 Reverse drain current vs.
Fig.14 Switching characteristics
t
0.2
t
d(on)
r
SOURCE-DRAIN VOLTAGE : V
t
d(off)
0.5
DRAIN CURRENT : I
source-drain voltage ( Ι )
t
f
0.5
1
2
5
Ta=125°C
2010.09 - Rev.A
10
1
−25°C
D
75°C
25°C
(mA)
20
Data Sheet
Ta =25°C
V
V
R
Pulsed
V
Pulsed
SD
DD
GS
G
GS
50
=10Ω
(V)
=5V
=5V
=0V
1.5
100