BTA212B-600D,118 NXP Semiconductors, BTA212B-600D,118 Datasheet - Page 4

• Manufacturer Part Number: BTA212B-600D,118
• Description: TRIAC 600V 12A D2PAK
• Manufacturer: NXP Semiconductors

Specifications of BTA212B-600D,118

• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Triac Type: Logic - Sensitive Gate
• Mounting Type: Surface Mount
• Configuration: Single
• Current - Hold (ih) (max): 15mA
• Voltage - Off State: 600V
• Current - Gate Trigger (igt) (max): 5mA
• Current - Non Rep. Surge 50, 60hz (itsm): 95A, 105A
• Current - On State (it (rms)) (max): 12A
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Current - On State (it (rms) (max): 12A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 105 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 5 mA
• Holding Current (ih Max): 15 mA
• Forward Voltage Drop: 1.6 V @ 17 A
• Mounting Style: SMD/SMT
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-3726-2; 934055320118; BTA212B-600D /T3

Philips Semiconductors
October 2003
Three quadrant triacs
guaranteed commutation
Fig.8. Normalised latching current I
Fig.9. Normalised holding current I
2.5
1.5
0.5
2.5
1.5
0.5
I
GT
3
2
1
0
2.5
1.5
0.5
3
2
1
0
-50
-50
(T
3
2
1
0
IL(25 C)
-50
IGT(25°C)
IL(Tj)
IGT(Tj)
IH(25C)
IH(Tj)
Fig.7. Normalised gate trigger current
j
)/ I
GT
versus junction temperature T
versus junction temperature T
(25˚C), versus junction temperature T
0
0
0
Tj/°C
Tj / C
50
Tj / C
50
50
100
100
100
H
L
(T
(T
j
j
)/ I
)/ I
j
j
T2+ G+
T2+ G-
T2- G-
.
.
H
L
(25˚C),
(25˚C),
150
150
150
j
.
4
10 3
10 2
10
Fig.10. Typical and maximum on-state characteristic.
1
Fig.11. Transient thermal impedance Z
20
dIcom/dt (A/ms)
0.001
40
30
20
10
commutating current dI
0.01
0
Fig.12. Minimum, critical rate of change of
0.1
0
10
10us
IT / A
1
Rs = 0.0316 Ohms
Vo = 1.175 V
Tj = 125 C
Tj = 25 C
Zth j-mb (K/W)
40
temperature, dV
0.5
0.1ms
BTA212B series D, E and F
60
unidirectional
pulse width t
1ms
1
tp / s
VT / V
10ms
1.5
com
80
com
typ
/dt = 10V/ s.
/dt versus junction
P
D
bidirectional
p
.
0.1s
Product specification
2
t p
100
max
th j-mb
2.5
1s
t
120
Rev 3.000
, versus
F TYPE
E TYPE
D TYPE
10s
T j (˚C)
3
140