BT131-600,412 NXP Semiconductors, BT131-600,412 Datasheet - Page 2

TRIAC 600V 1A SOT54

BT131-600,412

Manufacturer Part Number
BT131-600,412
Description
TRIAC 600V 1A SOT54
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BT131-600,412

Package / Case
TO-92-3 (Standard Body), TO-226
Triac Type
Logic - Sensitive Gate
Mounting Type
Through Hole
Configuration
Single
Current - Hold (ih) (max)
5mA
Voltage - Off State
600V
Current - Gate Trigger (igt) (max)
3mA
Current - Non Rep. Surge 50, 60hz (itsm)
12.5A, 13.8A
Current - On State (it (rms)) (max)
1A
Voltage - Gate Trigger (vgt) (max)
1.5V
Current - On State (it (rms) (max)
1A
Rated Repetitive Off-state Voltage Vdrm
600 V
Breakover Current Ibo Max
13.8 A
On-state Rms Current (it Rms)
1 A
Off-state Leakage Current @ Vdrm Idrm
0.1 mA
Gate Trigger Voltage (vgt)
0.7 V
Gate Trigger Current (igt)
3.8 mA
Holding Current (ih Max)
5 mA
Forward Voltage Drop
1.2 V
Mounting Style
Through Hole
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Repetitive Peak Forward Blocking Voltage
600 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934055156412
BT131-600
BT131-600

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BT131-600,412
Manufacturer:
NXP Semiconductors
Quantity:
7 700
Part Number:
BT131-600,412
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Philips Semiconductors
3. Ordering information
Table 2:
4. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
BT131_SER_8
Product data sheet
Type number
BT131-600
BT131-800
Symbol
V
I
I
I
dI
I
P
P
T
T
T(RMS)
TSM
2
GM
stg
j
DRM
t
GM
G(AV)
T
/dt
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 3 A/ s.
Ordering information
Limiting values
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
I
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
2
t for fusing
BT131-600
BT131-800
Package
Name
TO-92
Description
plastic single-ended leaded (through hole) package; 3 leads
Rev. 08 — 9 September 2005
Conditions
all conduction angles;
T
see
half sine wave; T
prior to surge; see
and
t = 10 ms
I
dI
over any 20 ms period
TM
lead
G
t = 20 ms
t = 16.7 ms
T2+ G+
T2+ G
T2 G
T2 G+
/dt = 200 mA/ s
= 1.5 A; I
Figure
3
= 51.2 C;
1,
G
4
= 20 mA;
and
j
= 25 C
Figure 2
5
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
40
BT131 series
Max
600
800
1
12.5
13.8
1.28
50
50
50
10
2
5
0.1
+150
125
Triacs logic level
Version
SOT54
Unit
V
V
A
A
A
A
A/ s
A/ s
A/ s
A/ s
A
W
W
C
C
2
s
2 of 12

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