BT131-600,412 NXP Semiconductors, BT131-600,412 Datasheet - Page 6
![TRIAC 600V 1A SOT54](/photos/1/39/13964/to-92_pkg_sml.jpg)
BT131-600,412
Manufacturer Part Number
BT131-600,412
Description
TRIAC 600V 1A SOT54
Manufacturer
NXP Semiconductors
Datasheet
1.BT131-800D116.pdf
(12 pages)
Specifications of BT131-600,412
Package / Case
TO-92-3 (Standard Body), TO-226
Triac Type
Logic - Sensitive Gate
Mounting Type
Through Hole
Configuration
Single
Current - Hold (ih) (max)
5mA
Voltage - Off State
600V
Current - Gate Trigger (igt) (max)
3mA
Current - Non Rep. Surge 50, 60hz (itsm)
12.5A, 13.8A
Current - On State (it (rms)) (max)
1A
Voltage - Gate Trigger (vgt) (max)
1.5V
Current - On State (it (rms) (max)
1A
Rated Repetitive Off-state Voltage Vdrm
600 V
Breakover Current Ibo Max
13.8 A
On-state Rms Current (it Rms)
1 A
Off-state Leakage Current @ Vdrm Idrm
0.1 mA
Gate Trigger Voltage (vgt)
0.7 V
Gate Trigger Current (igt)
3.8 mA
Holding Current (ih Max)
5 mA
Forward Voltage Drop
1.2 V
Mounting Style
Through Hole
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Repetitive Peak Forward Blocking Voltage
600 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934055156412
BT131-600
BT131-600
BT131-600
BT131-600
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BT131-600,412
Manufacturer:
NXP Semiconductors
Quantity:
7 700
Part Number:
BT131-600,412
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Philips Semiconductors
6. Characteristics
Table 5:
T
BT131_SER_8
Product data sheet
Symbol
Static characteristics
I
I
I
V
V
I
Dynamic characteristics
dV
dV
t
GT
L
H
D
gt
j
T
GT
= 25 C unless otherwise stated.
D
com
/dt
/dt
Characteristics
Parameter
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state current
rate of rise of off-state
voltage
rate of change of
commutating current
gate-controlled
turn-on time
Conditions
V
Figure 8
V
Figure 10
V
Figure 11
I
I
see
V
V
exponential waveform; R
see
V
dI
I
I
T
T
TM
G
D
D
D
D
DM
DM
com
T2+ G+
T2+ G
T2 G
T2 G+
T2+ G+
T2+ G
T2 G
T2 G+
= 1.4 A; see
= 10 mA; gate open circuit;
V
V
T
= 100 mA; dI
= 12 V; I
= 12 V; I
= 12 V; I
= V
j
D
D
= 1.5 A; V
Figure 7
Figure 12
= 125 C
= 67 % V
= 400 V; T
/dt = 0.5 A/ms
= 12 V; I
= 400 V; I
DRM(max)
Rev. 08 — 9 September 2005
T
GT
GT
= 100 mA; see
D
GT
DRM(max)
= 100 mA; see
= 100 mA; see
; T
Figure 9
j
GT
= V
G
= 125 C;
/dt = 5 A/ s
= 100 mA
j
= 100 mA;
= 125 C
DRM(max)
; T
GK
j
= 125 C;
;
= 1 k ;
Min
-
-
-
-
-
-
-
-
-
-
-
0.2
-
10
2
-
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
BT131 series
Typ
0.4
1.3
1.4
3.8
1.2
4
1
2.5
1.3
1.2
0.7
0.3
0.1
20
-
2
Triacs logic level
Max
3
3
3
7
5
8
5
8
5
1.5
1.5
-
0.5
-
-
-
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
V/ s
V/ s
s
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