BT1308W-600D,115 NXP Semiconductors, BT1308W-600D,115 Datasheet - Page 4

• Manufacturer Part Number: BT1308W-600D,115
• Description: TRIAC 600V 80MA SC-73
• Manufacturer: NXP Semiconductors

Specifications of BT1308W-600D,115

• Package / Case: TO-261-4, TO-261AA
• Triac Type: Logic - Sensitive Gate
• Mounting Type: Surface Mount
• Configuration: Single
• Current - Hold (ih) (max): 10mA
• Voltage - Off State: 600V
• Current - Gate Trigger (igt) (max): 5mA
• Current - Non Rep. Surge 50, 60hz (itsm): 9A, 10A
• Current - On State (it (rms)) (max): 800mA
• Voltage - Gate Trigger (vgt) (max): 2V
• Current - On State (it (rms) (max): 800mA
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 10 A
• On-state Rms Current (it Rms): 0.8 A
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Gate Trigger Voltage (vgt): 0.9 V
• Gate Trigger Current (igt): 4 mA
• Holding Current (ih Max): 10 mA
• Forward Voltage Drop: 1.35 V
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934060158115; BT1308W-600D T/R; BT1308W-600D T/R

NXP Semiconductors
BT1308W_SER_D_1
Product data sheet
Fig 3.
Fig 4.
I
I
T(RMS)
TSM
(A)
(1) dI
(2) T2 G+ quadrant limit
(A)
10
10
10
3
2
6
4
2
0
10
10
t
Non-repetitive peak on-state current as a function of pulse width; maximum values
f = 50 Hz
T
RMS on-state current as a function of surge
duration; maximum values
p
-5
-2
sp
T
/dt limit
= 107.4 C
20 ms
(2)
10
(1)
-1
10
-4
1
surge duration (s)
003aab489
Rev. 01 — 27 February 2008
10
10
-3
Fig 5.
I
T(RMS)
(A)
0.8
0.6
0.4
0.2
1
0
-50
RMS on-state current as a function of solder
point temperature; maximum values
BT1308W series D
0
10
-2
50
I
T
T
j(init)
= 25 C max
100
t
t
p
p
© NXP B.V. 2008. All rights reserved.
(s)
Triacs logic level
T
003aac208
003aab487
sp
I
( C)
TSM
t
10
150
-1
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