BTB16-600CW3G ON Semiconductor, BTB16-600CW3G Datasheet - Page 2

TRIAC 16A 35MA 600V TO-220AB

BTB16-600CW3G

Manufacturer Part Number
BTB16-600CW3G
Description
TRIAC 16A 35MA 600V TO-220AB
Manufacturer
ON Semiconductor
Datasheet

Specifications of BTB16-600CW3G

Triac Type
Standard
Mounting Type
Through Hole
Configuration
Single
Current - Hold (ih) (max)
50mA
Voltage - Off State
600V
Current - Gate Trigger (igt) (max)
35mA
Current - Non Rep. Surge 50, 60hz (itsm)
170A @ 60Hz
Current - On State (it (rms)) (max)
16A
Voltage - Gate Trigger (vgt) (max)
1.1V
Package / Case
TO-220-3
Current - On State (it (rms) (max)
16A
Peak Repetitive Off-state Voltage, Vdrm
600V
Gate Trigger Current Max (qi), Igt
35mA
On State Rms Current It(rms)
16A
Peak Non Rep Surge Current Itsm 50hz
170A
Holding Current Max Ih
50mA
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BTB16-600CW3G
Manufacturer:
ON Semiconductor
Quantity:
30
2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Thermal Resistance,
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds
Peak Repetitive Blocking Current
Peak On‐State Voltage (Note 2)
Gate Trigger Current (Continuous dc) (V
Holding Current
Latching Current (V
Gate Trigger Voltage (V
Gate Non-Trigger Voltage (T
Rate of Change of Commutating Current, See Figure 10.
Critical Rate of Rise of On-State Current
Critical Rate of Rise of Off‐State Voltage
(V
(I
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
(V
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
(Gate Open, T
(T
(V
TM
J
D
D
D
= 125°C, f = 120 Hz, I
= Rated V
= 12 V, Gate Open, Initiating Current = ±500 mA)
= 0.66 x V
= ± 22.5 A Peak)
DRM
J
DRM
= 125°C, No Snubber)
D
, V
, Exponential Waveform, Gate Open, T
= 12 V, I
RRM
D
Junction-to-Case
Junction-to-Ambient
= 12 V, R
G
; Gate Open)
J
= 2 x I
G
= 125°C)
= 1.2 x I
Characteristic
Characteristic
L
GT
= 33 W)
, tr ≤ 100 ns)
BTB16-600CW3G, BTB16-800CW3G
GT
D
(T
= 12 V, R
)
J
= 25°C unless otherwise noted; Electricals apply in both directions)
L
= 33 W)
http://onsemi.com
J
= 125°C)
2
T
T
J
J
= 25°C
= 125°C
Symbol
Symbol
(dI/dt)
I
R
R
dV/dt
I
dI/dt
DRM
V
V
V
RRM
I
T
qJC
qJA
GT
I
I
TM
GT
GD
H
L
L
/
c
1000
Min
2.0
2.0
2.0
0.5
0.5
0.5
0.2
0.2
0.2
6.0
-
-
-
-
-
-
-
-
Value
Typ
260
2.1
60
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.005
Max
1.55
2.0
1.7
1.1
1.1
35
35
35
50
60
65
60
50
-
-
-
-
-
°C/W
A/ms
A/ms
V/ms
Unit
Unit
mA
mA
mA
mA
°C
V
V
V

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