BTB16-600CW3G ON Semiconductor, BTB16-600CW3G Datasheet - Page 5

• Manufacturer Part Number: BTB16-600CW3G
• Description: TRIAC 16A 35MA 600V TO-220AB
• Manufacturer: ON Semiconductor

Specifications of BTB16-600CW3G

• Triac Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 50mA
• Voltage - Off State: 600V
• Current - Gate Trigger (igt) (max): 35mA
• Current - Non Rep. Surge 50, 60hz (itsm): 170A @ 60Hz
• Current - On State (it (rms)) (max): 16A
• Voltage - Gate Trigger (vgt) (max): 1.1V
• Package / Case: TO-220-3
• Current - On State (it (rms) (max): 16A
• Peak Repetitive Off-state Voltage, Vdrm: 600V
• Gate Trigger Current Max (qi), Igt: 35mA
• On State Rms Current It(rms): 16A
• Peak Non Rep Surge Current Itsm 50hz: 170A
• Holding Current Max Ih: 50mA
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100
5000
10
4K
3K
2K
1K
1
0
Figure 6. Typical Gate Trigger Current Variation
-40 -25 -10 5
10
Figure 8. Critical Rate of Rise of Off‐State Voltage
Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)
I
TM
ADJUST FOR
R
, 60 Hz V
T
G
Q2
200 V
, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
J
, JUNCTION TEMPERATURE (°C)
Q3
CHARGE
RMS
AC
(Exponential Waveform)
100
20
TRIGGER
Q1
Note: Component values are for verification of rated (di/dt)
35
50
BTB16-600CW3G, BTB16-800CW3G
CONTROL
NON‐POLAR
CHARGE
65
1000
80
V
R
C
D
L
V
T
L
95
J
D
= 30 W
= 12 V
= 125°C
= 800 Vpk
110 125
http://onsemi.com
10000
5
L
1N914
L
1.6
1.4
1.2
0.8
0.6
0.4
100
10
1
c
1
-40 -25 -10 5
. See AN1048 for additional information.
10
MEASURE
51 W
Figure 7. Typical Gate Trigger Voltage Variation
(di/dt)
I
T
J
20
MT2
= 125°C
c
G
, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
Figure 9. Critical Rate of Rise of
MT1
T
30
J
Q3
, JUNCTION TEMPERATURE (°C)
Q2
Commutating Voltage
40
I
TM
20
V
DRM
t
w
35
50
Q1
1N4007
f =
(di/dt)
50
2 t
1
100°C
w
60
c
=
-
+
6f I
1000
65
TM
70
200 V
80
V
R
D
L
95 110 125
80
= 30 W
= 12 V
c
75°C
90
100