NTMS5835NLR2G ON Semiconductor, NTMS5835NLR2G Datasheet - Page 2

• Manufacturer Part Number: NTMS5835NLR2G
• Description: MOSFET N-CH 50V 200MA 8SOIC
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NTMS5835NLR2G

• Input Capacitance (ciss) @ Vds: 2115pF @ 20V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 9.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Power - Max: 1.5W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
CHARGES, CAPACITANCES & GATE RESISTANCE
SWITCHING CHARACTERISTICS (Note 4)
DRAIN−SOURCE DIODE CHARACTERISTICS
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Gate Resistance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Parameter
(T
J
= 25°C unless otherwise specified)
V
V
V
Symbol
Q
V
GS(TH)
(BR)DSS
R
t
(BR)DSS
Q
t
d(OFF)
C
I
C
I
d(ON)
GS(TH)
C
V
DS(on)
G(TOT)
Q
Q
Q
DSS
GSS
V
t
g
G(TH)
T
R
RR
OSS
RSS
t
t
t
t
SD
ISS
FS
GS
GD
GP
a
b
RR
r
f
J
G
/T
http://onsemi.com
/
J
V
V
V
GS
GS
GS
V
V
GS
V
V
2
V
= 4.5 V, V
I
= 10 V, V
DS
V
= 0 V, f = 1 MHz, V
V
GS
V
GS
S
GS
V
I
V
V
DS
D
GS
GS
= 0 V, dIS/dt = 100 A/ms,
= 10 A
GS
GS
DS
= 40 V
= 0 V,
= 10 A, R
= 0 V,
Test Condition
= 4.5 V, V
= 0 V, V
= V
= 0 V, I
= 4.5 V, I
= 15 V, I
= 10 V, I
I
S
DS
DS
DS
= 10 A
, I
D
= 20 V; I
GS
= 20 V; I
D
G
DS
= 250 mA
D
D
D
= 250 mA
= 2.5 W
= ±20 V
= 10 A
= 10 A
= 10 A
= 20 V,
T
T
T
T
DS
J
J
J
J
D
= 125°C
D
= 125°C
= 25 °C
= 25°C
= 20 V
= 10 A
= 10 A
Min
40
1.0
0.785
2115
Typ
1.85
10.3
315
220
9.0
0.9
16
7.0
8.2
2.0
7.0
9.5
3.3
1.2
15
45
22
26
13
13
10
40
20
17
±100
Max
100
1.2
3.0
10
14
50
23
1
mV/°C
mV/°C
Unit
mA
nA
mW
ns
ns
nC
nC
pF
V
V
W
V
S
V