NTMS5835NLR2G ON Semiconductor, NTMS5835NLR2G Datasheet - Page 5

• Manufacturer Part Number: NTMS5835NLR2G
• Description: MOSFET N-CH 50V 200MA 8SOIC
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NTMS5835NLR2G

• Input Capacitance (ciss) @ Vds: 2115pF @ 20V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 9.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Power - Max: 1.5W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NTMS5835NL
TYPICAL PERFORMANCE CURVES
100
D = 0.5
0.2
0.1
10
0.05
0.02
1
0.01
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (s)
Figure 13. Thermal Response
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