NTMS5835NLR2G ON Semiconductor, NTMS5835NLR2G Datasheet - Page 3

• Manufacturer Part Number: NTMS5835NLR2G
• Description: MOSFET N-CH 50V 200MA 8SOIC
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NTMS5835NLR2G

• Input Capacitance (ciss) @ Vds: 2115pF @ 20V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 9.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Power - Max: 1.5W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.025
0.015
0.005
1.6
1.4
1.2
0.8
0.6
80
60
40
20
0
1
50
0
3
Figure 3. On−Resistance vs. Gate−to−Source
10 V
V
I
D
GS
Figure 5. On−Resistance Variation with
= 10 A
25
Figure 1. On−Region Characteristics
V
4
= 4.5 V
V
DS
GS
T
1
J
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
6.5 V
0
4.5 V
8.5 V
5
5.5 V
25
Temperature
2
6
Voltage
50
7
3
75
TYPICAL PERFORMANCE CURVES
8
100
T
I
D
J
T
4
= 10 A
= 25°C
J
4 V
= 25°C
3.6 V
3.4 V
9
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125
3 V
150
10
5
3
100000
10000
0.015
0.005
1000
0.02
0.01
80
70
60
50
40
30
20
10
0
10
2
2
Figure 4. On−Resistance vs. Drain Current and
T
V
Figure 6. Drain−to−Source Leakage Current
V
J
DS
GS
= 25°C
T
≥ 5 V
J
= 0 V
V
V
Figure 2. Transfer Characteristics
= 25°C
2.5
DS
GS
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
6
T
J
I
= 125°C
D,
20
T
3
DRAIN CURRENT (A)
J
Gate Voltage
= 150°C
vs. Voltage
T
V
V
J
GS
GS
10
= 125°C
T
3.5
= 4.5 V
= 10 V
J
= −55°C
30
14
4
4.5
18
40
5