SST39VF800A-70-4C-MAQE Microchip Technology, SST39VF800A-70-4C-MAQE Datasheet - Page 15

• Manufacturer Part Number: SST39VF800A-70-4C-MAQE
• Description: 2.7V To 3.6V 8Mbit Multi-Purpose Flash 48 WFBGA 4x6x0.8 Mm TRAY
• Manufacturer: Microchip Technology
• Series: -r

Specifications of SST39VF800A-70-4C-MAQE

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 8M (512K x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-WFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

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© 2011 Silicon Storage Technology, Inc.
Table 11:DC Operating Characteristics –V
Table 12:Recommended System Power-up Timings
Table 13:Capacitance
Table 14:Reliability Characteristics
Symbol Parameter
I
I
I
I
V
V
V
V
V
Symbol
T
T
Parameter Description
C
C
Symbol
N
T
I
DD
SB
LI
LO
LTH
PU-READ
PU-WRITE
DR
IL
IH
IHC
OL
OH
I/O
IN
END
1. Typical conditions for the Active Current shown on page 1 are average values at 25°C (room temperature),
2. Values are for 70 ns conditions. See the Multi-Purpose Flash Power Rating application note for further information.
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
2. N
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1
1
1
1
and V
parameter.
result in a higher minimum specification.
1,2
END
1
Power Supply Current
Read
Program and Erase
Standby V
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Input High Voltage (CMOS)
Output Low Voltage
Output High Voltage
1
endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating would
DD
2.7-3.6V for SST39VF200A/400A/800A
= 3V for VF devices. Not 100% tested.
Parameter
Power-up to Read Operation
Power-up to Program/Erase Operation
I/O Pin Capacitance
Input Capacitance
Parameter
Endurance
Data Retention
Latch Up
2
2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash
DD
Current
SST39VF200A / SST39VF400A / SST39VF800A
SST39LF200A / SST39LF400A / SST39LF800A
(T
A
= 25°C, f=1 Mhz, other pins open)
V
V
0.7V
DD
DD
Min
15
-0.3
-0.2
DD
Minimum Specification
DD
Limits
Max
100 + I
0.8
0.2
30
30
20
10
10,000
1
= 3.0-3.6V for SST39LF200A/400A/800A and
100
DD
1
Units
mA
mA
µA
µA
µA
V
V
V
V
Test Conditions
Address input=V
Min, V
CE#=V
open
CE#=WE#=V
CE#=V
V
V
V
V
V
I
I
Test Condition
OL
OH
Cycles
Years
Units
IN
OUT
DD
DD
DD
mA
=100 µA, V
=GND to V
=-100 µA, V
Minimum
V
=V
=V
=V
V
=GND to V
I/O
IN
DD
100
100
DD
DD
DD
IL
IHC
= 0V
= 0V
, OE#=WE#=V
=V
Min
Max
Max
, V
DD
JEDEC Standard A117
JEDEC Standard A103
DD
JEDEC Standard 78
IL
DD
DD
Max
, OE#=V
DD
=V
DD
=V
Test Method
ILT
, V
=V
DD
, V
DS25001A
/V
DD
DD
DD
IHT,
Max
DD
=V
Maximum
Min
IH
IH
Min
=V
Data Sheet
DD
Units
12 pF
at f=1/T
, all I/Os
6 pF
µs
µs
DD
T11.7 25001
T12.0 25001
T13.0 25001
T14.2 25001
Max
Max
RC
03/11