SST39VF800A-70-4C-MAQE Microchip Technology, SST39VF800A-70-4C-MAQE Datasheet - Page 2

• Manufacturer Part Number: SST39VF800A-70-4C-MAQE
• Description: 2.7V To 3.6V 8Mbit Multi-Purpose Flash 48 WFBGA 4x6x0.8 Mm TRAY
• Manufacturer: Microchip Technology
• Series: -r

Specifications of SST39VF800A-70-4C-MAQE

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 8M (512K x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-WFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

A Microchip Technology Company
© 2011 Silicon Storage Technology, Inc.
Product Description
The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 /
512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance
CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better
reliability and manufacturability compared with alternate approaches. The SST39LF200A/400A/800A
write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF200A/400A/800A write (Program
or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pinouts for x16
memories.
Featuring high-performance Word-Program, the SST39LF200A/400A/800A and SST39VF200A/400A/
800A devices provide a typical Word-Program time of 14 µsec. The devices use Toggle Bit or Data#
Polling to detect the completion of the Program or Erase operation. To protect against inadvertent
write, they have on-chip hardware and software data protection schemes. Designed, manufactured,
and tested for a wide spectrum of applications, these devices are offered with a guaranteed typical
endurance of 100,000 cycles. Data retention is rated at greater than 100 years.
The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are suited for applications that
require convenient and economical updating of program, configuration, or data memory. For all system
applications, they significantly improve performance and reliability, while lowering power consumption.
They inherently use less energy during Erase and Program than alternative flash technologies. When
programming a flash device, the total energy consumed is a function of the applied voltage, current,
and time of application. Since for any given voltage range, the SuperFlash technology uses less cur-
rent to program and has a shorter erase time, the total energy consumed during any Erase or Program
operation is less than alternative flash technologies. These devices also improve flexibility while lower-
ing the cost for program, data, and configuration storage applications.
The SuperFlash technology provides fixed Erase and Program times, independent of the number of
Erase/Program cycles that have occurred. Therefore the system software or hardware does not have
to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Pro-
gram times increase with accumulated Erase/Program cycles.
To meet surface mount requirements, the SST39LF200A/400A/800A and SST39VF200A/400A/800A
are offered in 48-lead TSOP packages and 48-ball TFBGA packages as well as Micro-Packages. See
Figures 2, 3, and 4 for pin assignments.
2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash
SST39VF200A / SST39VF400A / SST39VF800A
SST39LF200A / SST39LF400A / SST39LF800A
2
DS25001A
Data Sheet
03/11