RD28F1602C3T90 Intel, RD28F1602C3T90 Datasheet - Page 39
RD28F1602C3T90
Manufacturer Part Number
RD28F1602C3T90
Description
Manufacturer
Intel
Datasheet
1.RD28F1602C3T90.pdf
(75 pages)
Specifications of RD28F1602C3T90
Operating Supply Voltage (max)
3.3V
Operating Temperature (max)
85C
Mounting
Surface Mount
Lead Free Status / RoHS Status
Not Compliant
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Table 19.
Figure 10.
Datasheet
ADDRESSES (A)
DATA (D/Q)
UB#, LB#
CS
WE# (W)
OE# (G)
CS
1
# (E
SRAM AC Characteristics—Write Operations
AC Waveform: SRAM Write Operations
2
Notes:
1.
2.
3.
4.
5.
(E
W8
W9
C3 SCSP Flash Memory
#
1
2
)
)
Intel
V
V
V
V
V
V
V
V
V
V
V
V
V
V
See
A write occurs during the overlap (t
goes low and S-WE# goes low with asserting S-UB# or S-LB# for single byte operation or
simultaneously asserting
S-UB# and S-LB# for double byte operation. A write ends at the earliest transition when S-CS
high and S-WE# goes high. The t
t
t
t
CS
OH
IH
IH
AS
WP
WR
OL
IH
IH
IH
IH
IH
IL
IL
IL
IL
IL
t
t
WR
BW
Sym
®
1
is measured from the address valid to the beginning of write.
is measured from S-CS
# or S-WE# going high.
is measured from the end of write to the address change. t
Figure 10 “AC Waveform: SRAM Write Operations” on page
Advanced+ Boot Block Flash Memory (C3) SCSP Family
Standby
Write Recovery
S-UB#, S-LB# Setup to S-WE# (S-CS
High Z
Order Number: 252636, Revision: 004
W2
Parameter
Address Selection
1
Address Stable
# going low to end of write.
Device
WP
WP
is measured from the beginning of write to the end of write.
) of low S-CS
W5
1
Data In
W6
#) Going High
(1,2)
1
W1
# and low S-WE#. A write begins when S-CS
W9
W3
W4
WR
39.
Density
applied in case a write ends as S-
Note
5
Volt
2.7 V – 3.3 V
Min
60
2/4/8-Mbit
0
W8
26 Aug 2005
Max
W7
High Z
–
–
1
# goes
Unit
ns
ns
1
#
39
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