S71PL064JB0BFW0B0 Spansion Inc., S71PL064JB0BFW0B0 Datasheet - Page 26

• Manufacturer Part Number: S71PL064JB0BFW0B0
• Manufacturer: Spansion Inc.

Specifications of S71PL064JB0BFW0B0

• Operating Supply Voltage (max): 3.1V
• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Compliant

P r e l i m i n a r y
Device programming occurs by executing the program command sequence. The
Unlock Bypass mode facilitates faster programming times by requiring only two
write cycles to program data instead of four. Device erasure occurs by executing
the erase command sequence.
The host system can detect whether a program or erase operation is complete by
reading the DQ7 (Data# Polling) and DQ6 (toggle) status bits. After a program
or erase cycle has been completed, the device is ready to read array data or ac-
cept another command.
The sector erase architecture allows memory sectors to be erased and repro-
grammed without affecting the data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection measures include a low V
detector that automat-
CC
ically inhibits write operations during power transitions. The hardware sector
protection feature disables both program and erase operations in any combina-
tion of sectors of memory. This can be achieved in-system or via programming
equipment.
The Erase Suspend/Erase Resume feature enables the user to put erase on
hold for any period of time to read data from, or program data to, any sector that
is not selected for erasure. True background erase can thus be achieved. If a read
is needed from the SecSi Sector area (One Time Program area) after an erase
suspend, then the user must use the proper command sequence to enter and exit
this region.
The device offers two power-saving features. When addresses have been stable
for a specified amount of time, the device enters the automatic sleep mode.
The system can also place the device into the standby mode. Power consumption
is greatly reduced in both these modes.
The device electrically erases all bits within a sector simultaneously via Fowler-
Nordheim tunneling. The data is programmed using hot electron injection.
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S29PL127J/S29PL064J/S29PL032J for MCP
S29PL127_064_032J_00_A1 May 21, 2004