USBDF02W5 STMicroelectronics, USBDF02W5 Datasheet - Page 5
![IC EMI FILTER/LINE TERM SOT323-5](/photos/6/14/61499/usbdf02w5_sml.jpg)
USBDF02W5
Manufacturer Part Number
USBDF02W5
Description
IC EMI FILTER/LINE TERM SOT323-5
Manufacturer
STMicroelectronics
Series
USBDFxxW5r
Datasheet
1.USBDF01W5.pdf
(11 pages)
Specifications of USBDF02W5
Filter Type
Signal Line
Mounting Type
Surface Mount
Termination Style
Surface Mount (SMD,SMT)
Mounting Style
SMD/SMT
Package / Case
SOT-323-5
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Inductance
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-3742-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
USBDF02W5
Manufacturer:
BROADCOM
Quantity:
101
Company:
Part Number:
USBDF02W5
Manufacturer:
ST
Quantity:
23 000
Part Number:
USBDF02W5
Manufacturer:
ST
Quantity:
20 000
USBDFxxW5
To have a good approximation of the remaining voltages at both V
the typical dynamical resistance value R
R
The results of the calculation done for V
V
This confirms the very low remaining voltage across the device to be protected. It is also
important to note that in this approximation the parasitic inductance effect was not taken into
account. This could be few tenths of volts during few ns at the V
is not present at the V
The measurements results shown below show very clearly
the ESD protection :
●
●
Figure 6.
BR
t
> R
V
= 7 V (typ.) and R
V
V
no influence of the parasitic inductances on Vout stage
output clamping voltage very close to V
V
output
d
output
input
input
, R
g
=
=
= 31.2 V
> R and R
= 7.95 V
Measurement board
R .V
R .V
g
t
BR
BR
R
+ R . V
R
+ R . V
out
load
d
g
t
Discharge
= 1
d
SURGE
d
side due the low current involved after the resistance R.
15 kV
> R
ESD
Air
input
g
d
(typ.) give:
, gives these formulas::
PP
d
. Taking into account the following hypothesis:
= 8 kV, R
Vin
BR
TEST BOARD
(positive strike) and -V
g
= 330 W (IEC61000-4-2 standard),
Vout
(Figure
in
in
side. This parasitic effect
Application information
and V
7.) the high efficiency of
F
(negative strike)
out
stages, we give
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