IS41LV44002B-50TL ISSI, Integrated Silicon Solution Inc, IS41LV44002B-50TL Datasheet
IS41LV44002B-50TL
Specifications of IS41LV44002B-50TL
Related parts for IS41LV44002B-50TL
IS41LV44002B-50TL Summary of contents
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... These features make the IS41LV44002B ideally suited for high-bandwidth graphics, digital signal processing, high- performance computing systems, and peripheral applications. The IS41LV44002B is packaged in a 24-pin 300-mil SOJ and 300-mil TSOP2 with JEDEC standard pinouts. KEY TIMING PARAMETERS Parameter Voltage RAS Access Time (t 3.3V ± ...
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... IS41LV44002B FUNCTIONAL BLOCK DIAGRAM OE WE CAS CAS CONTROL LOGIC RAS RAS CLOCK GENERATOR REFRESH COUNTER ADDRESS BUFFERS A0-A10 TRUTH TABLE Function Standby Read Write: Word (Early Write) Read-Write EDO Page-Mode Read 1st Cycle: 2nd Cycle: EDO Page-Mode Write 1st Cycle: 2nd Cycle: ...
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... IS41LV44002B Functional Description The IS41LV44002B is a CMOS DRAMs optimized for high-speed bandwidth, low power applications. During READ or WRITE cycles, each bit is uniquely addressed through the 11 address bits. These are entered 11 bits (A0-A10 time for the 2K refresh device. The row address is latched by the Row Address Strobe (RAS). The column address is latched by the Column Address Strobe (CAS) ...
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... IS41LV44002B ABSOLUTE MAXIMUM RATINGS Symbol Parameters V Voltage on Any Pin Relative to GND T V Supply Voltage DD I Output Current OUT P Power Dissipation D T Operating Temperature A T Storage Temperature STG Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. ...
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... IS41LV44002B ELECTRICAL CHARACTERISTICS (Recommended Operating Conditions unless otherwise noted.) Symbol Parameter I Input Leakage Current IL I Output Leakage Current IO V Output High Voltage Level OH V Output Low Voltage Level Standby Current: TTL Standby Current: CMOS Operating Current: CC (2,3,4) Random Read/Write Average Power Supply Current ...
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... IS41LV44002B (1,2,3,4,5,6) AC CHARACTERISTICS (Recommended Operating Conditions unless otherwise noted.) Symbol Parameter t Random READ or WRITE Cycle Time RC Access Time from RAS t RAC Access Time from CAS t CAC t Access Time from Column-Address AA RAS Pulse Width t RAS RAS Precharge Time t RP CAS Pulse Width ...
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... IS41LV44002B AC CHARACTERISTICS (Continued) (Recommended Operating Conditions unless otherwise noted.) Symbol Parameter Write Command to RAS Lead Time t RWL Write Command to CAS Lead Time t CWL t Write Command Setup Time WCS Data-in Hold Time (referenced to RAS) t DHR Column-Address Setup Time to CAS t ACH Precharge during WRITE Cycle ...
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... IS41LV44002B Notes initial pause of 200 µs is required after power-up followed by eight RAS refresh cycle (RAS-Only or CBR) before proper device operation is assured. The eight RAS cycles wake-up should be repeated any time the (MIN) and V (MAX) are reference levels for measuring timing of input signals. Transition times, are measured between V ...
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... IS41LV44002B READ CYCLE RAS t CRP CAS t ASR ADDRESS Row WE I/O OE Note: is referenced from rising edge of RAS or CAS, whichever occurs last OFF Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 12/21/ RAS t CSH CAS RCD RAD RAL t t RAH ASC Column t RCS t AA ...
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... IS41LV44002B EARLY WRITE CYCLE (OE = DON'T CARE) RAS t CRP CAS t ASR ADDRESS Row WE I RAS t CSH t RSH t t CAS RCD RAD RAL RAH CAH ASC t ACH Column t CWL t RWL t WCR t t WCS WCH DHR Valid Data Integrated Silicon Solution, Inc. — 1-800-379-4774 ...
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... IS41LV44002B READ WRITE CYCLE (LATE WRITE and READ-MODIFY-WRITE Cycles) RAS t CRP CAS t ASR ADDRESS Row WE I/O OE Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 12/21/09 t RWC t RAS t CSH t RCD RAD RAH CAH ASC Column t RWD t RCS t AWD RAC t CAC t CLZ Open Valid D ...
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... IS41LV44002B EDO-PAGE-MODE READ CYCLE RAS t CRP CAS t RAD t ASR ADDRESS Row t RAH WE Open I/O OE Note: can be measured from falling edge of CAS to falling edge of CAS, or from rising edge of CAS to rising edge of CAS. Both measurements must meet the t specifications RASP t CSH t ( RCD CAS, ...
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... IS41LV44002B EDO-PAGE-MODE EARLY-WRITE CYCLE RAS t CRP CAS t RAD t ASR ADDRESS Row t RAH WE I/O OE Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 12/21/09 t RASP t CSH RCD CAS CLCH ACH ASC CAH ASC Column Column t t CWL t t WCS t t WCH WCH WCR t DHR ...
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... IS41LV44002B EDO-PAGE-MODE READ-WRITE CYCLE RAS CRP RCD CAS ASR RAD t t RAH ASC ADDRESS Row t RWD t RCS WE t RAC t CAC t CLZ Open I/O OE Note: can be measured from falling edge of CAS to falling edge of CAS, or from rising edge of CAS to rising edge of CAS. Both 1 ...
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... IS41LV44002B EDO-PAGE-MODE READ-EARLY-WRITE CYCLE RAS t t CRP t RCD CAS ASR RAD t t ASC RAH ADDRESS Row t RCS WE t RAC t CAC Open I/O OE Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 12/21/09 (Pseudo READ-MODIFY WRITE) t RASP CSH CAS CP CAS CAH ASC CAH Column (A) ...
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... IS41LV44002B AC WAVEFORMS (With WE-Controlled Disable) READ CYCLE RAS t CRP CAS t ASR ADDRESS Row WE I/O OE RAS RAS RAS RAS-ONLY REFRESH CYCLE RAS RAS t CRP CAS t ASR ADDRESS I CSH t RCD RAD t t RAH ASC Column t RCS RAC t CAC t CLZ Open t OE (OE DON'T CARE) ...
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... IS41LV44002B CBR CBR CBR REFRESH CYCLE CBR CBR (Addresses; WE DON'T CARE RAS t t RPC CHR t CP CAS I/O (1) HIDDEN REFRESH CYCLE RAS t CRP CAS t ASR ADDRESS Row I/O OE Notes Hidden Refresh may also be performed after a Write Cycle. In this case LOW and OE = HIGH. ...
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... IS41LV44002B-50CTG Industrial Range: -40°C to +85°C Speed (ns) Order Part No. 50 IS41LV44002B-50TI 50 IS41LV44002B-50TLI Notes: 1. Part numbers with TL, TLI, CTG, or CTGI are lead-free, and RoHS compliant. 2. For the “G” option less of SnBi plating. 18 Refresh Package 2K 300-mil TSOP-II, Alloy42 leadframe plated with SnPb ...
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... IS41LV44002B Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 12/21/09 19 ...