RC28F640J3F75A NUMONYX, RC28F640J3F75A Datasheet - Page 16
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RC28F640J3F75A
Manufacturer Part Number
RC28F640J3F75A
Description
Manufacturer
NUMONYX
Datasheet
1.RC28F640J3F75A.pdf
(66 pages)
Specifications of RC28F640J3F75A
Lead Free Status / RoHS Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
RC28F640J3F75A
Manufacturer:
TOSHIBA
Quantity:
1 870
Company:
Part Number:
RC28F640J3F75A
Manufacturer:
Micron Technology Inc
Quantity:
10 000
4.0
4.1
Figure 5:
Notes:
1.
2.
3.
4.
Datasheet
16
A
B
C
D
E
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F
A0 is the least significant address bit.
A22 is valid for 64-Mbit density and above. On 32-Mbit, it is a no-connect (NC).
A23 is valid for 128-Mbit density. On 32- and 64-Mbit, it is a no-connect (NC).
A24 is a no connect (NC) on 128-, 64-, 32- Mbit, reserved for 256-Mbit.
BYTE# DQ0 DQ10
CE2
DQ8
A23
A4
A1
A2
A3
1
(3)
Easy BGA Ballout (32/64/128 Mbit)
Ballouts/Pinouts and Signal Descriptions
J3 65 nm SBC is available in two package types. All densities of the J3 65 nm SBC
devices are supported on both 64-ball Easy BGA and 56-lead Thin Small Outline
Package (TSOP) packages. The figures below show the ballouts/Pinouts.
Easy BGA Ballout for 32-, 64-, 128-Mbit
DQ1
RFU
VSS
A6
A5
A0
A7
2
(1)
DQ9
DQ2
VCC
A11
A10
A8
A9
3
Top View – Ball Side Down
VCCQ DQ5
DQ11 DQ12
VPEN
DQ3
RP#
VSS
CE0
A12
4
Easy BGA
DQ13
DQ4
RFU
A13
A14
A15
5
RFU
RFU
RFU
DQ6
VSS
VCC
RFU
RFU
6
Numonyx
DQ15
DQ14
A16
DQ7
A18
RFU
A19
A20
7
A24
OE#
WE#
STS
A22
CE1
A17
A21
8
(4)
®
(2)
Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
WE#
A24
OE#
A22
STS
CE1
A17
A21
8
(4)
(2)
DQ15
DQ14
A16
DQ7
A18
RFU
A19
A20
7
RFU
RFU
RFU
DQ6
VSS
VCC
RFU
RFU
6
Bottom View – Ball Side Up
DQ12
DQ13
DQ5
DQ4
RFU
A13
A14
A15
5
Easy BGA
VCCQ
DQ11
VPEN
DQ3
RP#
VSS
CE0
A12
4
DQ10
DQ9
DQ2
VCC
A11
A10
A8
A9
3
VSS
DQ1
DQ0
RFU
A6
A5
A0
A7
2
(1)
BYTE#
DQ8
A23
CE2
A4
A1
A2
A3
1
(3)
March 2010
208032-02
A
B
C
D
E
G
H
F