M29W128GH70N6F NUMONYX, M29W128GH70N6F Datasheet - Page 52
M29W128GH70N6F
Manufacturer Part Number
M29W128GH70N6F
Description
Manufacturer
NUMONYX
Datasheet
1.M29W128GH70N6F.pdf
(94 pages)
Specifications of M29W128GH70N6F
Cell Type
NOR
Density
128Mb
Access Time (max)
70ns
Interface Type
Parallel
Address Bus
24/23Bit
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
16M/8M
Supply Current
10mA
Mounting
Surface Mount
Pin Count
56
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M29W128GH70N6F
Manufacturer:
ST
Quantity:
8 790
Company:
Part Number:
M29W128GH70N6F
Manufacturer:
SAMSUNG
Quantity:
6 389
Part Number:
M29W128GH70N6F
Manufacturer:
MICRON/美光
Quantity:
20 000
Figure 7.
1. PD is the programmed data (see
2. The lock register can only be programmed once.
52/94
Device returned
to Read mode
Lock register program flowchart
Write Lock Register Exit command:
Add Dont' care, Data 90h
Add Dont' care, Data 00h
Table 18: Lock register
PASS:
Enter Lock Register command set:
Program Lock Register Data:
Add Dont' care (1) , Data PDh
YES
Add Dont' care, Data A0h
Write Unlock cycles:
Add 555h, Data AAh
Add 2AAh, Data 55h
Add 555h, Data 40h
Polling algorithm
bits).
DQ5 = 1
START
Write
Done
NO
YES
NO
the device to Read mode
Unlock cycle 1
unlock cycle 2
Reset
FAIL
to return
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