M29W128GH70N6F NUMONYX, M29W128GH70N6F Datasheet - Page 69

• Manufacturer Part Number: M29W128GH70N6F
• Manufacturer: NUMONYX

Specifications of M29W128GH70N6F

• Cell Type: NOR
• Density: 128Mb
• Access Time (max): 70ns
• Interface Type: Parallel
• Address Bus: 24/23Bit
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 16M/8M
• Supply Current: 10mA
• Mounting: Surface Mount
• Pin Count: 56
• Lead Free Status / RoHS Status: Compliant

Figure 19. Chip enable controlled program waveforms (8-bit mode)
1. Only the third and fourth cycles of the Program command are represented. The Program command is followed by the check
2. PA is the address of the memory location to be programmed. PD is the data to be programmed.
3. DQ7 is the complement of the data bit being programmed to DQ7 (see
4. See
of status register data polling bit.
and
Table 26: Read AC characteristics
Table 27: Write AC characteristics, write enable
DQ0-DQ7
A0-A22/
A–1
W
G
E
for details on the timings.
tAVAV
tWLEL
tGHEL
tDVEH
tELEH
3rd cycle
tAVEL
555h
controlled,
AOh
4th cycle
tEHWH
tEHDX
PA
Table 28: Write AC characteristics, chip enable controlled
tEHEL1
PD
Section 7.2.1: Data polling bit
tELAX
tWHWH1
Data Polling
PA
DQ7 D OUT
AI13334
(DQ7)).
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