M29W128GH70N6F NUMONYX, M29W128GH70N6F Datasheet - Page 55
M29W128GH70N6F
Manufacturer Part Number
M29W128GH70N6F
Description
Manufacturer
NUMONYX
Datasheet
1.M29W128GH70N6F.pdf
(94 pages)
Specifications of M29W128GH70N6F
Cell Type
NOR
Density
128Mb
Access Time (max)
70ns
Interface Type
Parallel
Address Bus
24/23Bit
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
16M/8M
Supply Current
10mA
Mounting
Surface Mount
Pin Count
56
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M29W128GH70N6F
Manufacturer:
ST
Quantity:
8 790
Company:
Part Number:
M29W128GH70N6F
Manufacturer:
SAMSUNG
Quantity:
6 389
Part Number:
M29W128GH70N6F
Manufacturer:
MICRON/美光
Quantity:
20 000
Table 20.
1. Unspecified data bits should be ignored.
2.
Program
Program during erase suspend
Buffered program abort
Program error
Chip erase
Block erase before timeout
Block erase
Erase suspend
Erase error
DQ7
loaded.
for write to buffer program and enhanced buffered program is related to the last address location
(2)
Operation
Status register bits
(2)
Erasing block
Erasing block
Erasing block
Any address
Any address
Any address
Any address
Any address
Non-erasing
Non-erasing
Non-erasing
Faulty block
Good block
(1)
Address
address
address
block
block
block
DQ7
DQ7
DQ7
DQ7
DQ7
0
0
0
0
0
1
0
0
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Data read as normal
DQ6
No
DQ5 DQ3
0
0
0
1
0
0
0
0
0
0
1
1
–
–
–
–
1
0
0
1
1
–
1
1
Toggle
Toggle
Toggle
Toggle
Toggle
toggle
toggle
toggle
DQ2
No
No
No
–
–
–
–
DQ1
0
–
1
–
–
–
–
–
–
–
–
–
–
55/94
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
RB
0
0
0
0
0
0
0
0