S25FL016A0LMFI011 Spansion Inc., S25FL016A0LMFI011 Datasheet - Page 3

• Manufacturer Part Number: S25FL016A0LMFI011
• Manufacturer: Spansion Inc.

Specifications of S25FL016A0LMFI011

• Cell Type: NOR
• Density: 16Mb
• Access Time (max): 10ns
• Interface Type: Serial (SPI)
• Boot Type: Not Required
• Address Bus: 1b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: SOIC W
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 2M
• Supply Current: 19mA
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / RoHS Status: Compliant

Distinctive Characteristics
General Description
This document states the current technical specifications regarding the Spansion product(s) described herein. Spansion Inc. deems the products to have been in sufficient pro-
duction volume such that subsequent versions of this document are not expected to change. However, typographical or specification corrections, or modifications to the valid com-
binations offered may occur.
This product has been retired and is not recommended for designs. For new and current designs, S25FL032P supercedes
S25FL016A. This is the factory-recommended migration path. Please refer to the S25FL032P data sheet for specifications and
ordering information.
Architectural Advantages
S25FL016A
16 Megabit CMOS 3.0 Volt Flash Memory
with 50-MHz SPI (Serial Peripheral Interface) Bus
Data Sheet
Single power supply operation
– Full voltage range: 2.7 to 3.6 V read and program operations
Memory Architecture
– Thirty-two sectors with 512 Kb each
Program
– Page Program (up to 256 bytes) in 1.4 ms (typical)
– Program operations are on a page by page basis
Erase
– 0.5 s typical sector erase time
– 10 s typical bulk erase time
Cycling Endurance
– 100,000 cycles per sector typical
Data Retention
– 20 years typical
Device ID
– JEDEC standard two-byte electronic signature
– RES command one-byte electronic signature for backward
Process Technology
– Manufactured on 0.20 µm MirrorBit
compatibility
Publication Number S25FL016A_00
The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists
of thirty-two sectors, each with 512 Kb memory.
The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are
designed to be programmed in-system with the standard system 3.0 volt V
The memory can be programmed 1 to 256 bytes at a time, using the Page Program command. The device
supports Sector Erase and Bulk Erase commands.
Each device requires only a 3.0 volt power supply (2.7 V to 3.6 V) for both read and write functions. Internally
generated and regulated voltages are provided for the program operations. This device does not require a
V
PP
supply.
®
process technology
Revision C
Performance Characteristics
Memory Protection Features
Software Features
Amendment 4
Package Option
– Industry Standard Pinouts
– 16-pin SO package (300 mils)
– 8-pin SO package (208 mils)
– 8-Contact WSON Package (6x8 mm), Pb Free
Speed
– 50 MHz clock rate (maximum)
Power Saving Standby Mode
– Standby Mode 50 µA (max)
– Deep Power Down Mode 1.3 µA (typical)
Memory Protection
– W# pin works in conjunction with Status Register Bits to protect
– Status Register Block Protection bits (BP2, BP1, BP0) in status
– SPI Bus Compatible Serial Interface
specified memory areas
register configure parts of memory as read-only
Issue Date February 27, 2009
CC
supply.