MT45W1MW16BDGB-708 IT TR Micron Technology Inc, MT45W1MW16BDGB-708 IT TR Datasheet - Page 32
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MT45W1MW16BDGB-708 IT TR
Manufacturer Part Number
MT45W1MW16BDGB-708 IT TR
Description
Manufacturer
Micron Technology Inc
Datasheet
1.MT45W1MW16BDGB-708_IT_TR.pdf
(59 pages)
Specifications of MT45W1MW16BDGB-708 IT TR
Operating Temperature (max)
85C
Operating Temperature (min)
-40C
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Compliant
Table 10:
Table 11:
Figure 24:
Figure 25:
PDF: 09005aef81cb58ed/Source: 09005aef81c7a667
16mb_burst_cr1_0_p23z_2.fm - Rev. H 4/08 EN
Description
Description
Deep power-down
Input capacitance
Input/output capacitance (DQ)
Deep Power-Down Specifications
Capacitance
AC Input/Output Reference Waveform
Output Load Circuit
Notes:
Notes:
Notes:
1. These parameters are verified in device characterization and are not 100 percent tested.
Input
1. AC test inputs are driven at V
2. Input timing begins at V
3. Output timing ends at V
1. All tests are performed with the outputs configured for full drive strength (BCR[5] = 0b).
DUT
V
times (10% to 90%) < 1.6ns.
the input test point may not be shown to scale.
V
CC
SS
1
Q
Q
T
C
16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
= +25ºC; f = 1 MHz;
V
IN
Conditions
V
CC
Test Point
V
= V
/2
IN
Conditions
2
CC
= 0V
Q or 0V; +25°C
30pF
50
CC
CC
/2. Due to the possibility of a difference between V
Q/2.
32
CC
VccQ/2
Symbol
Q for a logic 1 and V
C
C
Test Points
IO
IN
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Symbol
Min
2.0
3.0
I
ZZ
SS
Q for a logic 0. Input rise and fall
Electrical Characteristics
V
Max
6.5
6.5
CC
Q/2
©2005 Micron Technology, Inc. All rights reserved.
3
Typ
10
Output
Units
pF
pF
CC
and V
Units
µA
Notes
1
1
CC
Q,